| dc.description | Semiconductors -- March 1999
Volume 33, Issue 3, pp. 265-372
REVIEW
Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
E. G. Guk, A. V. Kamanin, N. M. Shmidt, V. B. Shuman, and T. A. Yurre
Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Dielectric properties of the semiconducting compounds Cd1���xFexTe
P. V. Zukowski, J. Partyka, P. Wegierek, J. W. Sidorenko, J. A. Szostak, and A. Rodzik
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Current-illumination characteristics of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
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Temperature dependences of the photoconducitivty of CdHgTe crystals with photoactive inclusions
A. I. Vlasenko and Z. K. Vlasenko
Full Text: PDF (117 kB)
Raman scattering spectroscopy of Zn1 ��� xCdxSe films grown on GaAs substrates by molecular-beam epitaxy
L. K. Vodop'yanov, N. N. Mel'nik, and Yu. G. Sadof'ev
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Optical and photoelectric properties of Zn1 ��� xFexTe crystals
Yu. P. Gnatenko, I. A. Farina, and R. V. Gamernyk
Full Text: PDF (83 kB)
Calculating the band structure of InSb1 ��� xBix solid solutions
V. G. Deibuk, Ya. I. Viklyuk, and I. M. Rarenko
Full Text: PDF (108 kB)
SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Effective charge carrier lifetime in CdHgTe variable-gap structures
V. M. Osadchii, A. O. Suslyakov, V. V. Vasil'ev, and S. A. Dvoretsky
Full Text: PDF (84 kB)
Polarization photosensitivity of GaN/Si heterojunctions
V. M. Botnaruk, S. D. Raevsky, V. V. Belkov, Yu. V. Zhilyaev, Yu. V. Rud, L. M. Fedorov, and V. Yu. Rud
Full Text: PDF (103 kB)
Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures
I. Ya. Gerlovin, Yu. K. Dolgikh, S. A. Eliseev, Yu. P. Efimov, I. A. Nodokus, V. V. Ovsyankin, V. V. Petrov, and B. Ya. Ber
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Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures
E. I. Goldman, A. G. Zhdan, and N. F. Kukharskaya
Full Text: PDF (120 kB)
LOW-DIMENSIONAL SYSTEMS
Selective doping in hydride epitaxy and the electrical properties of quantum-well Ge/GeSi:B heterostructures
L. K. Orlov, R. A. Rubtsova, and N. L. Orlova
Full Text: PDF (94 kB)
Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots
V. A. Kul'bachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, I. G. Malkina, B. N. Zvonkov, and Yu. N. Saf'yanov
Full Text: PDF (124 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Comparative study of the optical properties of porous silicon and the oxides SiO and SiO2
A. N. Obraztsov, V. Yu. Timoshenko, H. Okushi, and H. Watanabe
Full Text: PDF (72 kB)
Photosensitive structures based on porous silicon
�. B. Kaganovich, �. G. Manoilov, and S. V. Svechnikov
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Photoconductivity of amorphous hydrated silicon doped by ion implantation
A. G. Kazanskii, N. V. Ryzhkova, and S. M. Pietruszko
Full Text: PDF (74 kB)
Electronic properties and structure of a-Si : H films with higher photosensitivity
O. A. Golikova and M. M. Kazanin
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PHYSICS OF SEMICONDUCTOR DEVICES
Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them
S. V. Slobodchikov, D. N. Goryachev, Kh. M. Salikhov, and O. M. Sreseli
Full Text: PDF (95 kB)
Temperature dependence of the quantum efficiency of silicon p ��� n photodiodes
Yu. A. Goldberg, V. V. Zabrodsky, O. I. Obolensky, T. V. Petelina, and V. L. Suhanov
Full Text: PDF (51 kB)
Planar-doped gallium-arsenide structures for bulk potential barrier microwave diodes
N. A. Maleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Volkov, and M. F. Kokorev
Full Text: PDF (87 kB)
Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
G. G. Zegrya, M. P. Mikhailova, T. N. Danilova, A. N. Imenkov, K. D. Moiseev, V. V. Sherstnev, and Yu. P. Yakovlev
Full Text: PDF (107 kB)
Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure
B. E. Zhurtanov, K. D. Moiseev, M. P. Mikhailova, T. I. Voronina, N. D. Stoyanov, and Yu. P. Yakovlev
Full Text: PDF (104 kB)
Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors
E. V. Astrova, V. B. Voronkov, A. A. Lebedev, A. N. Lodygin, and A. D. Remenyuk
Full Text: PDF (144 kB)
Vertical double-collector, strain-sensitive transistor with accelerating electric fields in the base and in the emitter
G. G. Babichev, S. I. Kozlovskii, and V. A. Romanov
Full Text: PDF (151 kB) | en |
