dc.description | Semiconductors -- April 1999
Volume 33, Issue 4, pp. 377-481
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Low-temperature relaxation of a solid solution of iron in gallium phosphide
E. S. Demidov, V. V. Karzanov, A. B. Gromoglasova, and O. N. Morozkin
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Modeling Si nanoprecipitate formation in SiO2 layers with excess Si atoms
A. F. Leier, L. N. Safronov, and G. A. Kachurin
Full Text: PDF (126 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Optical spectra and electronic structure of indium nitride
V. V. Sobolev and M. A. Zlobina
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Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon
N. A. Poklonskii and A. I. Syaglo
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The influence of defect clusters on redistribution of doping impurities in n- and p-type Si0.7Ge0.3 irradiated by reactor neutrons
A. P. Dolgolenko
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Acoustostimulated activation of bound defects in CdHgTe alloys
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
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A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
N. A. Poklonskii, A. I. Syaglo, and G. Biskupski
Full Text: PDF (140 kB)
Low-temperature photoluminescence in holmium-doped silicon
B. A. Andreev, N. A. Sobolev, Yu. A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Generation-recombination instabilities in thin-film structures
V. V. Kolobaev
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Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
V. M. Botnaryuk, Yu. V. Zhilyaev, Yu. V. Rud', and V. Yu. Rud'
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Surface of n-type InP (100) passivated in sulfide solutions
V. N. Bessolov, M. V. Lebedev, and D. R. T. Zahn
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Electrical and photoelectric characteristics of an isotypic n-ZnO���n-Si structure
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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LOW-DIMENSIONAL SYSTEMS
Analysis of mechanisms for electron scattering in GaAs/AlxGa1 ��� xAs superlattices with doped quantum wells for longitudinal resonant current flow in high electric fields and at low temperatures
S. I. Borisenko and G. F. Karavaev
Full Text: PDF (149 kB)
Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells
V. E. Kudryashov, A. N. Turkin, A. �. Yunovich, A. N. Kovalev, and F. I. Manyakhin
Full Text: PDF (138 kB)
Photoionization of deep impurity centers in quantum well structures
V. I. Belyavskii and Yu. A. Pomerantsev
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Photovoltaic effect in the impurity absorption region of Si-structures with blocked impurity conductivity
B. A. Aronzon, V. V. Rylkov, L. Asadauskas, R. Brazis, D. Yu. Kovalev, and J. Leotin
Full Text: PDF (163 kB)
AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Defects in a-Si:H films induced by Si ion implantation
O. A. Golikova
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Absorption and the optical gap of a-C:H films produced from acetylene plasmas
E. A. Konshina
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Conductivity relaxation in coated porous silicon after annealing
S. P. Zimin and A. N. Bragin
Full Text: PDF (68 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Photomemory in CdTe thin-film solar cells
�. N. Voronkov, A. E. Sharonov, and V. V. Kolobaev
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Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells
V. Yu. Rud', Yu. V. Rud', and H. W. Schock
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Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
A. F. Tsatsul'nikov, B. V. Volovik, N. N. Ledentsov, M. V. Maksimov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alf�rov, I. �. Kozin, M. V. Belousov, and D. Bimberg
Full Text: PDF (76 kB)
Influence of deep traps on current transport in Pd���p(n)���CdTe structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
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Determination of the parameters of deep levels from the relaxational delay of breakdown of a p���n junction
S. V. Bulyarskii, Yu. N. Ser�zhkin, and V. K. Ionychev
Full Text: PDF (86 kB)
Effect of laser radiation on GaP epitaxial diode structures
V. V. Inyakov, E. N. Moos, and Yu. A. Shrainer
Full Text: PDF (50 kB)
PERSONALIA
Vitali[i-breve] Ivanovich Stafeev (on his 70th birthday)
Full Text: PDF (176 kB)
Aleksandr Aleksandrovich Lebedev (on his 70th birthday)
Full Text: PDF (124 kB) | en |