| dc.description | Semiconductors -- May 1999
Volume 33, Issue 5, pp. 483-593
REVIEW
Induced photopleochroism in semiconductors Review
F. P. Kesamanly, V. Yu. Rud', and Yu. V. Rud'
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ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects
M. Yu. Barabanenkov, A. V. Leonov, V. N. Mordkovich, and N. M. Omel'yanovskaya
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Effect of the irradiation intensity on the efficiency of the production radiation defects in n- and p-type Si crystals
T. A. Pagava and Z. V. Basheleishvili
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Spontaneously forming periodic composition-modulated InGaAsP structures
N. A. Bert, L. S. Vavilova, I. P. Ipatova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, A. A. Sitnikova, I. S. Tarasov, and V. A. Shchukin
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Absorption of infrared radiation by free charge carriers in n-type Cd1���xZnxTe
A. I. Belogorokhov, A. G. Belov, V. M. Lakeenkov, N. A. Smirnova, and L. I. Belogorokhova
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Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
G. A. Il'chuk, N. A. Ukrainets, V. I. Ivanov-Omskii, Yu. V. Rud', and V. Yu. Rud'
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Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions
I. E. Tyschenko, V. A. Volodin, L. Rebohle, M. Voelskov, and V. Skorupa
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Slow photoconductivity relaxation due to radiation defects in p-type Si
S. E. Mal'khanov
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Dependence of the properties of Cd1 ��� xZnxTe crystals on the type of intrinsic point defect formed by oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, V. K. Komar, V. G. Galstan, and V. S. Zimogorskii
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Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type CdxHg1���xTe
S. G. Gasan-zade, M. V. Strikha, and G. A. Shepelskii
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The effect of fields due to charge centers at random locations in a semiconductor crystal on the electronic structure of neutral acceptors and on the polarization of luminescence generated by -acceptor transitions
E. B. Osipov, O. V. Voronov, N. O. Sorokina, and B. V. Borisov
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The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr2Se4 ferromagnetic semiconductor
L. L. Golik and Z. �. Kun'kova
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Saturated vertical drift velocity of electrons in silicon carbide polytypes
V. I. Sankin and A. A. Lepneva
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts
A. A. Verevkin, N. G. Ptitsina, K. V. Smirnov, B. M. Voronov, G. N. Gol'tsman, E. M. Gershenson, and K. S. Yngvesson
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Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers
A. V. Ankudinov, V. P. Evtikhiev, V. E. Tokranov, V. P. Ulin, and A. N. Titkov
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LOW-DIMENSIONAL SYSTEMS
Spectrum and electron-phonon interaction in a medium with a cylindrical quantum wire
N. V. Tkach and V. P. Zharkoi
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Electron and hole spectra in a superlattice of cylindrical quantum wires
V. M. Golovach, G. G. Zegrya, A. M. Makhanets, I. V. Pronishin, and N. V. Tkach
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Vibrational spectra of erbium- and copper-modified hydrogenated amorphous carbon
V. I. Ivanov-Omskii, A. A. Andreev, and G. S. Frolova
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PHYSICS OF SEMICONDUCTOR DEVICES
Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity
D. G. Esaev, S. P. Sinitsa, and E. V. Chernyavskii
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D'yakonov���Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel
M. V. Cheremisin and G. G. Samsonidze
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InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 ��m
N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, V. M. Ustinov, I. L. Krestnikov, A. V. Lunev, A. V. Sakharov, B. V. Volovik, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alf�rov, and D. Bimberg
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Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry
V. P. Evtikhiev, E. Yu. Kotel'nikov, I. V. Kudryashov, V. E. Tokranov, and N. N. Faleev
Full Text: PDF (191 kB) | en |
