| dc.description | Semiconductors -- June 1999
Volume 33, Issue 6, pp. 595-705
PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS���RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October 26, 1998 OPENING ADDRESS
B. P. Zakharchenya
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Erbium-doped silicon epilayers grown by liquid-phase epitaxy
S. Binetti, S. Pizzini, A. Cavallini, and B. Fraboni
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Photoluminescence of erbium-doped silicon: excitation power dependence
C. A. J. Ammerlaan, D. T. X. Thao, T. Gregorkiewicz, and N. A. Sobolev
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Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium
V. V. Emtsev, V. V. Emtsev, Jr., D. S. Poloskin, N. A. Sobolev, E. I. Shek, J. Michel, and L. C. Kimerling
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Redistribution of erbium during the crystallization of buried amorphous silicon layers
O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, V. I. Sakharov, I. T. Serenkov, and Yu. A. Kudryavtsev
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Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon
N. A. Sobolev, E. I. Shek, A. M. Emel'yanov, V. I. Vdovin, and T. G. Yugova
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Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures
N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel'yanov, and V. I. Vdovin
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Mechanisms of excitation of the f ��� f emission in silicon codoped with erbium and oxygen
V. F. Masterov and L. G. Gerchikov
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Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
M. S. Bresler, O. B. Gusev, P. E. Pak, E. I. Terukov, K. D. Ts�ndin, and I. N. Yassievich
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Effect of annealing on the optical and structural properties of GaN:Er
N. A. Sobolev, V. V. Lundin, V. I. Sakharov, I. T. Serenkov, A. S. Usikov, and A. M. Emel'yanov
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Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures
A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov, and V. V. Ushakov
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ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Photothermoacoustic and photoelectric microscopy of silicon
R. M. Burbelo, A. G. Kuz'mich, and I. Ya. Kucherov
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Radiation-thermal activation of silicon implanted in gallium arsenide
V. M. Ardyshev and A. P. Surzhikov
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Photoionization of short-range acceptor states in uniaxially deformed semiconductors
A. A. Abramov, V. N. Tulupenko, V. T. Vas'ko, and D. A. Firsov
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Electric and luminescence properties of GaAs���AIIBIVC2V single crystals
I. K. Polushina, Yu. V. Rud', and V. Yu. Rud'
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Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors
I. I. Lyapilin and Kh. M. Bikkin
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures
D. V. Vyalykh and S. I. Fedoseenko
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Reconstruction and electron states of a Ga2Se3���GaAsheterointerface
B. L. Agapov, N. N. Bezryadin, G. I. Kotov, M. P. Sumets, and I. N. Arsent'ev
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Sulfide passivation of GaAs power diodes
V. M. Botnaryuk, Yu. V. Zhilyaev, and E. V. Konenkova
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Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor
N. N. Bezryadin, �. P. Domashevskaya, G. I. Kotov, R. V. Kuz'menko, M. P. Sumets, and I. N. Arsent'ev
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Deep-level recombination spectroscopy in GaP light-emitting diodes
S. V. Bulyarskii, M. O. Vorob'ev, N. S. Grushko, and A. V. Lakalin
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Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures
M. V. Belous, A. M. Genkin, and V. K. Genkina
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LOW-DIMENSIONAL SYSTEMS
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy
G. �. Tsyrlin, V. N. Petrov, S. A. Masalov, and A. O. Golubok
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Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D���quasi-3D transition
V. F. Sapega, V. I. Perel', D. N. Mirlin, I. A. Akimov, T. Ruf, M. Cardona, W. Winter, and K. Eberl
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers
T. K. Zvonareva and L. V. Sharonova
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PHYSICS OF SEMICONDUCTOR DEVICES
Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light
V. Yu. Rud', Yu. V. Rud', and V. P. Khvostikov
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Increasing the power of broad-waveguide lasers by additional selection of transverse modes
I. A. Kostko, V. P. Evtikhiev, E. Yu. Kotel'nikov, and G. G. Zegrya
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Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
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PERSONALIA
In Memory of Vadim Fedorovich Masterov
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