| dc.description | Semiconductors -- February 1999
Volume 33, Issue 2, pp. 107-222
REVIEW
Deep level centers in silicon carbide: A review
A. A. Lebedev
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ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy
A. Yu. Andreev, B. A. Andreev, M. N. Drozdov, Z. F. Krasil'nik, M. V. Stepikhova, V. B. Shmagin, V. P. Kuznetsov, R. A. Rubtsova, E. A. Uskova, Yu. A. Karpov, H. Ellmer, L. Palmetshofer, K. Piplits, and H. Hutter
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Evidence for epsilon2-conductivity in the magnetoresistance of multivalley semiconductors
N. V. Agrinskaya, V. I. Kozub, T. A. Polyanskaya, and A. S. Saidov
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Hot-carrier far infrared emission in silicon
L. A. Kosyachenko and M. P. Mazur
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Bragg reflectors for cylindrical waves
V. V. Nikolaev, G. S. Sokolovskii, and M. A. Kaliteevskii
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LOW-DIMENSIONAL SYSTEMS
Photo- and electroluminescence in the 1.3-��m wavelength range from quantum-dot structures grown on GaAs substrates
A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maksimov, A. F. Tsatsul'nikov, N. N. Ledentsov, Yu. M. Shernyakov, A. V. Lunev, Yu. G. Musikhin, N. A. Bert, P. S. Kop'ev, and Zh. I. Alferov
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Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
M. M. Sobolev, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, and Yu. G. Musikhin
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Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, B. V. Volovik, P. S. Kop'ev, and Zh. I. Alferov
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Optical properties of porous silicon layers processed with a HF:HCl:C2H5OH electrolyte
A. I. Belogorokhov and L. I. Belogorokhova
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Conductivity of structures based on doped nanocrystalline SnO2 films with gold contacts
B. A. Akimov, A. M. Gas'kov, S. E. Podguzova, M. N. Rumyantseva, L. I. Ryabova, M. Labeau, and A. Tadeev
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Influence of the substrate temperature and annealing on the 1.54-��m erbium photoluminescence of a-Si:H films obtained using a glow discharge
E. I. Terukov, O. I. Kon'kov, V. Kh. Kudoyarova, O. B. Gusev, G. Weiser, and H. Kuehne
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PHYSICS OF SEMICONDUCTOR DEVICES
Transport properties and photosensitivity of metal/porous-silicon/c-Si structures
D. G. Yarkin
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Gain in injection lasers based on self-organized quantum dots
A. R. Kovsh, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov, N. N. Ledentsov, M. V. Maksimov, A. F. Tsatsul'nikov, and P. S. Kop'ev
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Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation
A. N. Kovalev, F. I. Manyakhin, V. E. Kudryashov, A. N. Turkin, and A. �. Yunovich
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Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-��m spectral range
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
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High-power light-emitting diodes operating in the 1.9 to 2.1 ��� ��m spectral range
T. N. Danilova, B. E. Zhurtanov, A. L. Zakgeim, N. D. Il'inskaya, A. N. Imenkov, O. N. Saraev, M. A. Sipovskaya, V. V. Sherstnev, and Yu. P. Yakovlev
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Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (lambda = 3.3 ��m) due to nonlinear optical effects
A. P. Danilova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, M. V. Stepanov, V. V. Sherstnev, and Yu. P. Yakovlev
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Long-wavelength photodiodes based on Ga1 ��� xInxAsySb1 ��� y with composition near the miscibility boundary
I. A. Andreev, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev
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ERRATA
Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484���487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs [Semiconductors 32, 479���483 (May 1998)]
I. L. Bronevoi and A. N. Krivonosov
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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048���1053 (October 1998)]
N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, and C. T. Foxon
Full Text: PDF (19 kB) | en |
