| dc.description | Semiconductors -- September 2000
Volume 34, Issue 9, pp. 983-1102
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Long-Range Effects of Ion Irradiation, Chemical Etching, and Mechanical Grinding on Relaxation of a Solid Solution of Iron in Gallium Phosphide
E. S. Demidov, A. B. Gromoglasova, and V. V. Karzanov
pp. 983-988 Full Text: PDF (80 kB)
Oxygen-Containing Radiation Defects in Si1 ��� xGex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, V. I. Yashnik, N. V. Abrosimov, W. Schr�_der, and M. H�_hne
pp. 989-993 Full Text: PDF (76 kB)
Specific Features of the Behavior of Oxygen in Sn-Doped Silicon
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, and V. I. Yashnik
pp. 994-997 Full Text: PDF (58 kB)
Early Stages of Oxygen Precipitation in Silicon: The Effect of Hydrogen
V. P. Markevich, L. I. Murin, J. L. Lindstr�_m, and M. Suezawa
pp. 998-1003 Full Text: PDF (89 kB)
Generation of Bulk Defects in Some Semiconductors by Laser Radiation in the Transparency Region of the Crystal
S. V. Plyatsko
pp. 1004-1010 Full Text: PDF (88 kB)
Electron Mobility and Electron Scattering by Polar Optical Phonons in Heterostructure Quantum Wells
J. Pozela, K. Pozela, and V. Juciene
pp. 1011-1015 Full Text: PDF (66 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons
A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovskii, N. S. Savkina, and A. M. Strel'chuk
pp. 1016-1020 Full Text: PDF (70 kB)
Breakdown of Shallow-Level Donors in Si and Ge on the Insulating Side of a Strain-Induced Metal���Insulator Transition
S. I. Budzulyak, E. F. Venger, Yu. P. Dotsenko, V. N. Ermakov, V. V. Kolomoets, V. F. Machulin, and L. I. Panasyuk
pp. 1021-1023 Full Text: PDF (44 kB)
Mechanism of High Radiation Stability of Electrical Parameters of SmS Thin Films
L. N. Vasil'ev, V. V. Kaminskii, S. M. Solov'ev, and N. V. Sharenkova
pp. 1024-1026 Full Text: PDF (47 kB)
Influence of Erbium Ion Implantation Dose on Characteristics of (111) Si:(Er, O) Light-Emitting Diodes Operating in p���n-Junction Breakdown Mode
N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev
pp. 1027-1030 Full Text: PDF (79 kB)
Optical Bistability and Instability in a Semiconductor in the Case Where the Relaxation Time of Free Charge Carriers and Their Equilibrium Concentration are Temperature-Dependent
O. S. Bondarenko, T. M. Lysak, and V. A. Trofimov
pp. 1031-1044 Full Text: PDF (154 kB)
Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E0 Fundamental Transition
R. V. Kuz'menko, A. V. Ganzha, �. P. Domashevskaya, V. Kircher, and S. Hildebrandt
pp. 1045-1051 Full Text: PDF (88 kB)
Thermal EMF in a Bipolar Semiconductor with Phonon Drag of Carriers
A. Konin and R. Raguotis
pp. 1052-1053 Full Text: PDF (25 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation
I. V. Antonova, V. F. Stas', V. P. Popov, V. I. Obodnikov, and A. K. Gutakovskii
pp. 1054-1057 Full Text: PDF (186 kB)
Fabrication and Photoelectric Properties of Oxide/CdTe Structures
G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets
pp. 1058-1061 Full Text: PDF (57 kB)
The Transient Photomagnetic Effect in Multilayer Structures with p���n Junctions
V. N. Agarev and V. I. Stafeev
pp. 1062-1063 Full Text: PDF (25 kB)
Photovoltaic Effect in a-Si:H/n-InSe Heterostructures
R. N. Bekimbetov, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 1064-1067 Full Text: PDF (54 kB)
LOW-DIMENSIONAL SYSTEMS
Accumulation of Majority Charge Carriers in GaAs Layers Containing Arsenic Nanoclusters
P. N. Brunkov, V. V. Chaldyshev, A. V. Chernigovskii, A. A. Suvorova, N. A. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1068-1072 Full Text: PDF (172 kB)
Diagnostics of the Hot-Hole Distribution Function in Quantum Wells in a Strong Electric Field
V. Ya. Aleshkin, D. M. Gaponova, V. I. Gavrilenko, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov, and E. A. Uskova
pp. 1073-1078 Full Text: PDF (93 kB)
Size-Quantization Stark Effect in Quasi-Zero-Dimensional Semiconductor Structures
S. I. Pokutnii
pp. 1079-1084 Full Text: PDF (76 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Nanostructured a-Si:H Films Obtained by Silane Decomposition in a Magnetron Chamber
O. A. Golikova, M. M. Kazanin, A. N. Kuznetsov, and E. V. Bogdanova
pp. 1085-1089 Full Text: PDF (74 kB)
On the Mechanism of Porous Silicon Formation
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 1090-1093 Full Text: PDF (46 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Elemental Composition and Electrical Properties of (a-C:H):Cu Films Prepared by Magnetron Sputtering
T. K. Zvonareva, V. M. Lebedev, T. A. Polyanskaya, L. V. Sharonova, and V. I. Ivanov-Omskii
pp. 1094-1099 Full Text: PDF (87 kB)
Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p���n-Junction Plane
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 1100-1102 Full Text: PDF (43 kB) | en |
