| dc.description | Semiconductors -- November 1999
Volume 33, Issue 11, pp. 1157-1264
ATOMIC STRUCTURE AND NON-ELECTRONIC PROPERTIES OF SEMICONDUCTORS
Spatially inhomogeneous oxygen precipitation in silicon
S. V. Bulyarskii, V. V. Svetukhin, and O. V. Prikhod'ko
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Enhanced formation of thermal donors in irradiated germanium: local vibrational mode spectroscopy
A. A. Klechko, V. V. Litvinov, V. P. Markevich, and L. I. Murin
Full Text: PDF (39 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Radiation defects in semiconductors under hydrostatic pressure
V.N. Brudnyi
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Photoconductivity spectral characteristics of semiconductors with exponential fundamental absorption edge
A. I. Vlasenko, Z. K. Vlasenko, and A. V. Lyubchenko
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The electron density of semiconductors with charged dislocations placed in external fields
Z. A. Veliev
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Activation of impurities in ZnSe crystals, stimulated by a laser shock wave
A. Baidullaeva, A. I. Vlasenko, B. L. Gorkovenko, and P. E. Mozol'
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Effects of heavy p doping on the polarized emission spectra and low-temperature luminescence spectra of GaAs/GaAsP strained-layer structures
A. V. Subashiev, Yu. A. Mamaev, B. D. Oskotskii, Yu. P. Yashin, and V. K. Kalevich
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Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC
V. S. Ballandovich
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Physical properties of CdGeAs2 crystals grown by solid-state synthesis
V. Yu. Rud', Yu. V. Rud', and T. N. Ushakova
Full Text: PDF (32 kB)
Change in the energy of Jahn���Teller configurations of vacancy���donor complexes induced by uniaxial strain
N. S. Averkiev, A. A. Gutkin, and M. A. Reshchikov
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SEMICONDUCTORS STRUCTURES,INTERFACES,AND SURFACES
Using the temperature-dependent photovoltage to investigate porous silicon/silicon structures
E. F. Venger, �. B. Kaganovich, S. I. Kirillova, �. G. Manoilov, V. E. Primachenko, and S. V. Svechnikov
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Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers
K. V. Vasilevskii, S. V. Rendakova, I. P. Nikitina, A. I. Babanin, A. N. Andreev, and K. Zekentes
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Effect of low-temperature charge redistributions on the conductivity of surface electron channels at the Si / SiO2 interface
N. I. Bochkareva and S. A. Khorev
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Statistical delay of microplasma breakdown in GaP p���n junctions
S. V. Bulyarskii, Yu. N. Ser�zhkin, and V. K. Ionychev
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LOW-DIMENSIONAL SYSTEMS
On the transformation of the potential barrier at a GaAs/Au interface during heat treatment
B. I. Bednyi
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Absorption of a strong electromagnetic wave by electrons in a superlattice in a quantizing electric field
D. V. Zav'yalov and S. V. Kryuchkov
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X-Ray diffraction analysis of multilayer InAs���GaAs heterostructures with InAs quantum dots
N. N. Faleev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, K. M. Pavlov, V. I. Punegov, M. Tabuchi, and Y. Takeda
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Quantum Hall effect in a single-mode wire
Z. D. Kvon, E. B. Ol'shanestkii, M. I. Katkov, A. E. Plotnikov, A. I. Toropov, N. T. Moshegov, M. Casse, and J. C. Portal
Full Text: PDF (38 kB)
Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices
D. G. Kipshidze, H. P. Schenk, A. Fissel, U. Kaiser, J. Schulze, Wo. Richter, M. Weihnacht, R. Kunze, and J. Kr�_usslich
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AMORPHOUS,GLASSY,AND POROUS SEMICONDUCTORS
Reversible and irreversible changes in the photoluminescence spectra of porous silicon held in water
B. R. Dzhumaev
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Conductivity and absorption edge of amorphous silicyne
A. I. Mashin and A. F. Khokhlov
Full Text: PDF (222 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Classification of single-electron devices
I. I. Abramov and E. G. Novik
Full Text: PDF (104 kB)
Temperature dependence of the gain of lasers based on quantum-dot arrays with an inhomogeneously broadened density of states
A. E. Zhukov, A. R. Kovsh, and V. M. Ustinov
Full Text: PDF (73 kB) | en |
