| dc.description | Semiconductors -- February 2002
Volume 36, Issue 2, pp. 121-238
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
B. V. Petukhov
pp. 121-125 Full Text: PDF (64 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electrical Properties of Silicon Layers Implanted with Ytterbium Ions
O. V. Aleksandrov, A. O. Zakhar'in, and N. A. Sobolev
pp. 126-129 Full Text: PDF (57 kB)
Effect of Optical Radiation on Internal Friction in Piezoelectric Semiconductors with Deep-Level Centers
V. I. Mitrokhin, S. I. Rembeza, V. V. Sviridov, and N. P. Yaroslavtsev
pp. 130-135 Full Text: PDF (87 kB)
"LO-Phonon" Correlation between Picosecond Superluminescence Spectrum and Special Features of Absorption Spectrum in GaAs for Non-Fermi Distribution of Carriers Induced by Picosecond Light Pulse
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 136-140 Full Text: PDF (71 kB)
Linear Photovoltaic Effect in Gyrotropic Crystals
R. Ya. Rasulov, Yu. E. Salenko, and D. Kambarov
pp. 141-147 Full Text: PDF (97 kB)
Optical Properties of Fluorite in a Wide Energy Range
V. V. Sobolev and A. I. Kalugin
pp. 148-152 Full Text: PDF (76 kB)
Influence of Laser Pump Density on the Characteristic Time Constant and the Intermediate-Field Electromodulation E0 Component of the Photoreflectance Signal
R. V. Kuz'menko, A. V. Ganzha, �. P. Domashevskaya, S. Hildenbrandt, and J. Schreiber
pp. 153-156 Full Text: PDF (52 kB)
Effect of Ionization on the Behavior of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing
M. V. Ardyshev and V. M. Ardyshev
pp. 157-159 Full Text: PDF (48 kB)
Annealing of Deep Boron Centers in Silicon Carbide
V. S. Ballandovich and E. N. Mokhov
pp. 160-166 Full Text: PDF (86 kB)
Edge-Photoluminescence Concentration Dependence in Semi-Insulating Undoped GaAs
V. F. Kovalenko, M. B. Litvinova, and S. V. Shutov
pp. 167-170 Full Text: PDF (66 kB)
Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy
V. B. Shmagin, B. A. Andreev, A. V. Antonov, Z. F. Krasil'nik, V. P. Kuznetsov, O. A. Kuznetsov, E. A. Uskova, C. A. J. Ammerlaan, and G. Pensl
pp. 171-175 Full Text: PDF (70 kB)
Optical Absorption in (Pb0.78Sn0.22)1 ��� XInXTe (X = 0.001 ��� 0.005)
A. N. Veis
pp. 176-179 Full Text: PDF (65 kB)
Distribution of Charge Carriers in Dissipative Semiconductor Structures
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 180-184 Full Text: PDF (83 kB)
The Effect of Charge-Carrier Drift in the Built-in Quasi-Electric Field on the Emission Spectrum for Graded-Gap Semiconductors
V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 185-188 Full Text: PDF (66 kB)
SEMICONDUCTOR STRUCTURE, INTERFACES, AND SURFACES
Silicon Surface Treatment by Pulsed Nitrogen Plasma
F. B. Baimbetov, B. M. Ibraev, and A. M. Zhukeshov
pp. 189-190 Full Text: PDF (36 kB)
Role of Surface Segregation in Formation of Abrupt Interfaces in Si/Si1 ��� xGex Heterocompositions Grown by Molecular-Beam Epitaxy with Combined Sources
L. K. Orlov and N. L. Ivina
pp. 191-196 Full Text: PDF (78 kB)
Segregation of Mobile Ions on Insulator���Semiconductor Interfaces in Metal���Insulator���Semiconductor Structures
S. G. Dmitriev and Yu. V. Markin
pp. 197-202 Full Text: PDF (85 kB)
LOW-DIMENSIONAL SYSTEMS
Photoluminescence of Anti-Modulation-Doped GaAs/AlGaAs Single Quantum Well Structures Exposed to Hydrogen Plasma
Yu. A. Bumai, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, V. Nakov, and T. S. Cheng
pp. 203-207 Full Text: PDF (67 kB)
Energy Spectrum and Optical Properties of the Quantum Dot���Impurity Center Complex
V. D. Krevchik and A. V. Levashov
pp. 208-212 Full Text: PDF (72 kB)
Injection Excitation of Luminescence in Multilayer nc-Si/Insulator Structures
Yu. A. Berashevich, B. V. Kamenev, and V. E. Borisenko
pp. 213-218 Full Text: PDF (68 kB)
Temperature Dependence of the Optical Energy Gap for the CdSxSe1 ��� x Quantum Dots
V. P. Kunets, N. R. Kulish, Vas. P. Kunets, M. P. Lisitsa, and N. I. Malysh
pp. 219-223 Full Text: PDF (62 kB)
The Dicke Superradiation in Quantum Heterostructures under Optical Pumping
A. I. Klimovskaya, E. G. Gule, and Yu. A. Driga
pp. 224-225 Full Text: PDF (35 kB)
Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range
N. N. Zinov'ev, A.V. Andrianov, V. Yu. Nekrasov, L. V. Belyakov, O. M. Sreseli, G. Hill, and J. M. Chamberlain
pp. 226-229 Full Text: PDF (55 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Effect of Thermal Treatment on Structure and Properties of a-Si:H Films Obtained by Cyclic Deposition
V. P. Afanas'ev, A. S. Gudovskikh, V. N. Nevedomskii, A. P. Sazanov, A. A. Sitnikova, I. N. Trapeznikova, and E. I. Terukov
pp. 230-234 Full Text: PDF (155 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Optimal Doping of the Drift Region in Unipolar Diodes and Transistors
A. S. Kyuregyan
pp. 235-238 Full Text: PDF (54 kB) | en |
