Show simple item record

Semiconductors V. 36, I. 06

dc.contributor.editordc.contributor.editor[en_US]en_US
dc.contributor.otherdc.contributor.other[en_US]en_US
dc.date.accessioned2007-06-12T18:45:44Z
dc.date.accessioned2015-04-24T14:42:34Z
dc.date.available2007-06-12T18:45:44Z
dc.date.available2015-04-24T14:42:34Z
dc.date.issued2002-06en_US
dc.identifier.urihttp://hdl.handle.net/1951/41439
dc.identifier.urihttp://hdl.handle.net/11401/70237
dc.descriptiondc.description[en_US]en_US
dc.descriptionSemiconductors -- June 2002 Volume 36, Issue 6, pp. 605-716 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Formation of Selenium-Containing Complexes in Silicon A. A. Taskin and E. G. Tishkovskii pp. 605-614 Full Text: PDF (114 kB) Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition M. V. Baidakova, A. Ya. Vul', V. G. Golubev, S. A. Grudinkin, V. G. Melekhin, N. A. Feoktistov, and A. Kr�_ger pp. 615-620 Full Text: PDF (255 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Local Vibrational Modes of the Oxygen���Vacancy Complex in Germanium V. V. Litvinov, L. I. Murin, J. L. Lindstrom, V. P. Markevich, and A. N. Petukh pp. 621-624 Full Text: PDF (61 kB) Luminescent Si���Ge Solid Solution Layers Er-Doped in Molecular-Beam Epitaxy V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil'nik, B. Ya. Ber, Yu. N. Drozdov, and A. N. Yablonsky pp. 625-628 Full Text: PDF (62 kB) Migration of Laser-Induced Point Defects in IV���VI Compounds S. V. Plyatsko pp. 629-635 Full Text: PDF (89 kB) Physical Properties of Semi-Insulating CdTe:Cl Single Crystals Grown from the Vapor Phase V. D. Popovich, G. M. Grigorovich, P. M. Peleshchak, and P. N. Tkachuk pp. 636-640 Full Text: PDF (66 kB) Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells A. V. Andrianov, V. Yu. Nekrasov, N. M. Shmidt, E. E. Zavarin, A. S. Usikov, N. N. Zinov'ev, and M. N. Tkachuk pp. 641-646 Full Text: PDF (104 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Silicon Nanocrystal Formation upon Annealing of SiO2 Layers Implanted with Si Ions G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler, A. F. Leier, and M.-O. Ruault pp. 647-651 Full Text: PDF (74 kB) Role of Silicon Vacancies in Formation of Schottky Barriers at Ag and Au Contacts to 3C- and 6H-SiC S. Yu. Davydov, A. A. Lebedev, O. V. Posrednik, and Yu. M. Tairov pp. 652-654 Full Text: PDF (40 kB) Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy E. N. Agafonov, A. N. Georgobiani, and L. S. Lepnev pp. 655-658 Full Text: PDF (66 kB) Simulation of the Energy Spectrum of Surface States in an MIS Structure Taking Current Leakage through the Insulator into Account L. S. Berman pp. 659-662 Full Text: PDF (49 kB) LOW-DIMENSIONAL SYSTEMS Mixed Vibrational Modes of PbTe Nanocrystallites A. I. Belogorokhov, L. I. Belogorokhova, D. R. Khokhlov, and S. V. Lemeshko pp. 663-669 Full Text: PDF (106 kB) Electron States in (AlAs)M(AlxGa1 ��� xAs)N Superlattices G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov pp. 670-673 Full Text: PDF (56 kB) Electron Mobility in a AlGaAs/GaAs/AlGaAs Quantum Well V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, and V. Juciene pp. 674-678 Full Text: PDF (57 kB) Resonance Transfer of Charge Carriers in Si/CaF2 Periodic Nanostructures via Trap States in Insulator Layers Yu. A. Berashevich, A. L. Danilyuk, and V. E. Borisenko pp. 679-684 Full Text: PDF (71 kB) Inversion of the Electron Population in Subbands of Dimensional Quantization with Longitudinal Transport in Tunnel-Coupled Quantum Wells V. Ya. Aleshkin and A. A. Dubinov pp. 685-690 Full Text: PDF (72 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Photoconductivity of Nanostructured Hydrogenated Silicon Films O. A. Golikova pp. 691-694 Full Text: PDF (53 kB) Vibratonal Spectroscopy of a-C:H(Co) T. K. Zvonareva, E. I. Ivanova, G. S. Frolova, V. M. Lebedev, and V. I. Ivanov-Omskii pp. 695-700 Full Text: PDF (93 kB) PHYSICS OF SEMICONDUCTOR DEVICES Spontaneous and Stimulated Emission from Magnetron-Deposited ZnO���SiO2���Si Thin-Film Nanocavities A. N. Gruzintsev, V. T. Volkov, C. Barthou, and P. Benalloul pp. 701-705 Full Text: PDF (61 kB) Photoelectric Properties of p+���n Junctions Based on 4H-SiC Ion-Implanted with Aluminum G. N. Violina, E. V. Kalinina, G. F. Kholujanov, G. A. Onushkin, V. G. Kossov, R. R. Yafaev, A. Hall�n, and A. O. Konstantinov pp. 706-709 Full Text: PDF (55 kB) Silicon Carbide Detectors of High-Energy Particles G. N. Violina, E. V. Kalinina, G. F. Kholujanov, V. G. Kossov, R. R. Yafaev, A. Hall�n, and A. O. Konstantinov pp. 710-713 Full Text: PDF (53 kB) Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 ��m N. Yu. Gordeev, L. Ya. Karachinsky, I. I. Novikov, A. V. Lyutetsky, N. A. Pikhtin, N. V. Fetisova, I. S. Tarasov, and P. S. Kop'ev pp. 714-716 Full Text: PDF (46 kB)en
dc.formatdc.format[en_US]en_US
dc.format.extent1486920 bytes
dc.format.extent7646 bytes
dc.format.mediumdc.format.medium[en_US]en_US
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherdc.publisher[en_US]en_US
dc.relation.ispartofseriesV. 36en
dc.relation.ispartofseriesI. 06en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsdc.rights[en_US]en_US
dc.subjectSemiconductorsen
dc.subject.lcshdc.subject.lcsh[en_US]en_US
dc.subject.lcshPhysicsen
dc.subject.otherdc.subject.other[en_US]en_US
dc.titleSemiconductors V. 36, I. 06en
dc.typedc.type[en_US]en_US
dc.description.contributordc.description.contributor[en_US]en_US
dc.publisher.locationdc.publisher.location[en_US]en_US


Files in this item

Thumbnail
Name:
SEMv36i6.html
Size:
7.466Kb
Format:
text/html
Description:
Table of Contents
View/Open
Thumbnail
Name:
SEMv36i6final.pdf
Size:
1.418Mb
Format:
application/pdf
Description:
Issue
View/Open

This item appears in the following Collection(s)

Show simple item record