| dc.description | Semiconductors -- October 2002
Volume 36, Issue 10, pp. 1073-1197
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamic Stability of Bulk and Epitaxial Ge1 ��� xSnx Semiconductor Alloys
V. G. Deibuk and Yu. G. Korolyuk
pp. 1073-1076 Full Text: PDF (56 kB)
The Effect of the Concentration of the Majority Charge Carriers and Irradiation Intensity on the Efficiency of Radiation-Defect Production in n-Si Crystals
T. A. Pagava and Z. V. Basheleishvili
pp. 1077-1078 Full Text: PDF (35 kB)
Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals
T. A. Pagava
pp. 1079-1082 Full Text: PDF (64 kB)
Chalcogen Dimers in Silicon
A. A Taskin
pp. 1083-1090 Full Text: PDF (110 kB)
Chemical Bonding and Elastic Constants of Certain Ternary III���V Solid Solutions
V. G. Deibuk and Ya. I. Viklyuk
pp. 1091-1096 Full Text: PDF (74 kB)
The Nucleation of Coherent Semiconductor Islands during the Stranski���Krastanov Growth Induced by Elastic Strains
S. A. Kukushkin, A. V. Osipov, F. Schmitt, and P. Hess
pp. 1097-1105 Full Text: PDF (140 kB)
Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation
N. Yu. Arutyunov, A. V. Mikhailin, V. Yu. Davydov, V. V. Emtsev, G. A. Oganesyan, and E. E. Haller
pp. 1106-1110 Full Text: PDF (69 kB)
The Influence of Shallow Impurities on the Temperature Dependence of Microhardness and the Photomechanical Effect in Semiconductors
A. B. Gerasimov and G. D. Chiradze
pp. 1111-1113 Full Text: PDF (43 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon
P. F. Ermolov, D. E. Karmanov, A. K. Leflat, V. M. Manankov, M. M. Merkin, and E. K. Shabalina
pp. 1114-1122 Full Text: PDF (103 kB)
Electronic Properties of Liquid Tl2Te, Tl2Se, Ag2Te, Cu2Te, and Cu2Se Alloys
V. M. Sklyarchuk and Yu. O. Plevachuk
pp. 1123-1127 Full Text: PDF (73 kB)
Dependence of GaN Photoluminescence on the Excitation Intensity
V. N. Bessolov, V. V. Evstropov, M. E. Kompan, and M. V. Mesh
pp. 1128-1131 Full Text: PDF (57 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitivity of Structures Based on I���IIIn���VIm Ternary Compounds Containing Ordered Vacancies
I. V. Bodnar', V. Yu. Rud', Yu. V. Rud', and M. V. Yakushev
pp. 1132-1135 Full Text: PDF (55 kB)
Effect of the State of the Silicon Surface on Hydrogen Sensitivity of Pd/n-Si Barrier Structures
V. M. Kalygina, L. S. Khludkova, V. I. Balyuba, and T. A. Davydova
pp. 1136-1137 Full Text: PDF (30 kB)
Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes
L. A. Kosyachenko, A. V. Markov, S. �. Ostapov, I. M. Rarenko, V. M. Sklyarchuk, and Ye. F. Sklyarchuk
pp. 1138-1145 Full Text: PDF (105 kB)
LOW-DIMENSIONAL SYSTEMS
Anisotropy of Magnetooptical Absorption of Quantum Dot���Impurity Center Complexes
V. D. Krevchik, A. B. Grunin, and R. V. Zaitsev
pp. 1146-1153 Full Text: PDF (106 kB)
Dependence of the Optical Gap of Si Quantum Dots on the Dot Size
V. A. Burdov
pp. 1154-1158 Full Text: PDF (61 kB)
Dependence of Scattering of Quasi-Two-Dimensional Electrons by Acoustic Phonons on the Parameters of a GaAs/AlxGa1 ��� xAs Superlattice
S. I. Borisenko
pp. 1159-1162 Full Text: PDF (53 kB)
Temperature Dependence of Conductance of Electrostatically Disordered Quasi-2D Semiconductor Systems Near an Insulator���Metal Percolation Transition
A. B. Davydov, B. A. Aronzon, D. A. Bakaushin, and A. S. Vedeneev
pp. 1163-1168 Full Text: PDF (92 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Photoluminescence and Recombination Luminescence in Amorphous Molecular Semiconductors Doped with Organic Dyes
N. A. Davidenko, S. L. Studzinskii, N. A. Derevyanko, A. A. Ishchenko, Yu. A. Skryshevskii, and A. J. Al-Kahdymi
pp. 1169-1179 Full Text: PDF (135 kB)
Crystallization of Amorphous Hydrogenated Silicon Films Deposited under Various Conditions
O. A. Golikova[dagger], E. V. Bogdanova, and U. S. Babakhodzhaev
pp. 1180-1183 Full Text: PDF (55 kB)
Electroluminescence from Porous Silicon in the Cathodic Reduction of Persulfate Ions: Degree of Reversibility of the Tuning Effect
A. A. Saren, S. N. Kuznetsov, V. B. Pikulev, Yu. E. Gardin, and V. A. Gurtov
pp. 1184-1187 Full Text: PDF (59 kB)
Space Charge Limited Current in Porous Silicon and Anatase (TiO2)
�. A. Lebedev and T. Dittrich
pp. 1188-1191 Full Text: PDF (57 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Influence of the Design and Material Parameters on the Current���Voltage Characteristics of Two-Island Single-Electron Chains
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 1192-1197 Full Text: PDF (81 kB) | en |
