| dc.description | Semiconductors -- January 2003
Volume 37, Issue 1, pp. 1-118
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Multifrequency Kinks in Multifrequency External Fields
M. E. Polyakov
pp. 1-5 Full Text: PDF (59 kB)
Electrical Activity of Dislocations and Point Defects of Deformation Origin in CdxHg1 ��� xTe Crystals
S. G. Gasan-zade, S. V. Staryi, M. V. Strikha, and G. A. Shepel'skii
pp. 6-14 Full Text: PDF (167 kB)
Determination of Deformation Potential Constants for n- and p-Si from the Concentration Anharmonicity
A. A. Skvortsov, O. V. Litvinenko, and A. M. Orlov
pp. 15-19 Full Text: PDF (67 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Electronic (Charge) State of E Traps on Their Introduction Rate in Irradiated n-GaAs
V. N. Brudnyi and V. V. Peshev
pp. 20-27 Full Text: PDF (100 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Study of Photocapacitance in Diodes Fabricated from Silicon Doped with Vanadium
Kh. T. Igamberdiev, A. T. Mamadalimov, R. A. Muminov, T. A. Usmanov, and Sh. A. Shoyusupov
pp. 28-30 Full Text: PDF (56 kB)
Investigation of Magnetosensitivity of Transistor Structures with Diffusive Transport of Injected Charge Carriers
M. A. Glauberman, V. V. Yegorov, V. V. Kozel, and N. A. Kanishcheva
pp. 31-37 Full Text: PDF (84 kB)
Size Effect in Two-Photon Absorption of Recombination Radiation in Graded-Gap AlxGa1 ��� xAs Solid Solutions
V. F. Kovalenko and S. V. Shutov
pp. 38-43 Full Text: PDF (77 kB)
Mathematical Simulation of the Kinetics of High-Temperature Silicon Oxidation and the Structure of the Boundary Layer in the Si���SiO2 System
G. Ya. Krasnikov, N. A. Zaitsev, and I. V. Matyushkin
pp. 44-49 Full Text: PDF (74 kB)
Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p���n Structures with a Thin Multiplication Region
A. K. Baranouskii, P. V. Kuchinskii, and E. D. Savenok
pp. 50-52 Full Text: PDF (52 kB)
Photoelectric Properties of Heterojunctions between Silicon and Polyhomoconjugated Organometallic Compounds
N. V. Blinova, E. L. Krasnopeeva, Yu. A. Nikolaev, A. Yu. Osadchev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and V. V. Shamanin
pp. 53-56 Full Text: PDF (69 kB)
Optical Transparency of Macroporous Silicon with Through Pores
E. V. Astrova, L. I. Korovin, I. G. Lang, A. D. Remenyuk, and V. B. Shuman
pp. 57-64 Full Text: PDF (151 kB)
Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation
N. B. Strokan, A. M. Ivanov, M. E. Boiko, N. S. Savkina, A. M. Strel'chuk, A. A. Lebedev, and R. Yakimova
pp. 65-69 Full Text: PDF (67 kB)
LOW-DIMENSIONAL SYSTEMS
Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
V. A. Kul'bachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov, Yu. V. Fedorov, Yu. V. Khabarov, E. Narumi, K. Kindo, and A. de Visser
pp. 70-76 Full Text: PDF (155 kB)
Investigation of Electronic Transitions in Coupled-Quantum-Well Structures with a Built-in Electric Field by Photoreflectance Spectroscopy
G. B. Galiev, V. �. Kaminskii, V. G. Mokerov, L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, and V. A. Kul'bachinskii
pp. 77-81 Full Text: PDF (68 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Influence of Charged Defects on Detection of Electron Spin Resonance in Vitreous Chalcogenide Semiconductors
L. P. Ginzburg
pp. 82-91 Full Text: PDF (119 kB)
Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation
O. V. Naumova, I. V. Antonova, V. P. Popov, and V. F. Stas'
pp. 92-96 Full Text: PDF (82 kB)
Structural���Phase Transformations in SiOx Films in the Course of Vacuum Heat Treatment
I. P. Lisovskyy, I. Z. Indutnyy, B. N. Gnennyy, P. M. Lytvyn, D. O. Mazunov, A. S. Oberemok, N. V. Sopinskyy, and P. E. Shepelyavyi
pp. 97-102 Full Text: PDF (139 kB)
The Influence of Hydrogen Plasma on the Electroreflectance Spectrum and the Spectrum of Electron States of Porous Silicon
E. F. Venger, R. Yu. Holiney, L. A. Matveeva, and A. V. Vasin
pp. 103-107 Full Text: PDF (60 kB)
Optical Properties of Polydimethylphenyleneoxide Free-Standing Films Containing Fullerene
Yu. F. Biryulin, E. Yu. Melenevskaya, S. N. Mikov, S. E. Orlov, V. D. Petrikov, D. A. Syckmanov, and V. N. Zgonnik
pp. 108-111 Full Text: PDF (53 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold
N. Yu. Gordeev, S. V. Zaitsev, L. Ya. Karachinsky, V. I. Kopchatov, I. I. Novikov, V. M. Ustinov, and P. S. Kop'ev
pp. 112-114 Full Text: PDF (50 kB)
Tunneling Recombination in Silicon Avalanche Diodes
S. V. Bulyarskii, V. K. Ionychev, and V. V. Kuz'min
pp. 115-118 Full Text: PDF (63 kB) | en |
