| dc.description | Semiconductors -- April 2003
Volume 37, Issue 4, pp. 367-492
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Structural Disordering and Viedemann���Franz Relation in Melts of Some II���IV���V2 Semiconductors
Ya. B. Magomedov and M. A. Aidamirov
pp. 367-369 Full Text: PDF (42 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Effect of Crystallization of Amorphous Vanadium Dioxide Films on the Parameters of a Semiconductor���Metal Phase Transition
V. A. Klimov, I. O. Timofeeva, S. D. Khanin, E. B. Shadrin, A. V. Il'inskii, and F. Silva-Andrade
pp. 370-374 Full Text: PDF (165 kB)
Recombination Current Instability in Epitaxial p+���n Structures with Impurity Atoms Locally Incorporated into the n-type Region and Determination of the Deep Center Parameters
B. S. Muravskii[dagger], O. N. Kulikov, and V. N. Chernyi
pp. 375-379 Full Text: PDF (73 kB)
Optical Reflection in (Pb0.78Sn0.22)1 ��� xInxTe Solid Solutions with a High Indium Content
A. N. Veis and A. V. Nashchekin
pp. 380-383 Full Text: PDF (226 kB)
Effect of Lattice Deformation on Semiconducting Properties of CrSi2
A. V. Krivosheeva, V. L. Shaposhnikov, A. E. Krivosheev, A. B. Filonov, and V. E. Borisenko
pp. 384-389 Full Text: PDF (109 kB)
Electrical Properties of InAs Irradiated with Protons
V. N. Brudnyi, N. G. Kolin, and A. I. Potapov
pp. 390-395 Full Text: PDF (107 kB)
Influence of Pulsed Laser Radiation on the Morphology and Photoelectric Properties of InSb Crystals
V. A. Gnatyuk and O. S. Gorodnychenko
pp. 396-398 Full Text: PDF (87 kB)
IR Birefringence in Artificial Crystal Fabricated by Anisotropic Etching of Silicon
E. V. Astrova, T. S. Perova, V. A. Tolmachev, A. D. Remenyuk, J. Vij, and A. Moore
pp. 399-403 Full Text: PDF (128 kB)
Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon
V. V. Lukjanitsa
pp. 404-413 Full Text: PDF (126 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on ZnIn2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 414-416 Full Text: PDF (48 kB)
Special Features of Electron Scattering at AlxGa1 ��� xAs/AlAs(001) Interfaces
S. N. Grinyaev, G. F. Karavaev, and V. N. Chernyshov
pp. 417-425 Full Text: PDF (117 kB)
The Charge Accumulation in an Insulator and the States at Interfaces of Silicon-on-Insulator Structures as a Result of Irradiation with Electrons and Gamma-Ray Photons
D. V. Nikolaev, I. V. Antonova, O. V. Naumova, V. P. Popov, and S. A. Smagulova
pp. 426-432 Full Text: PDF (92 kB)
The Effect of Internal Fields on Tunneling Current in Strained GaN/AlxGa1 ��� xN(0001) Structures
S. N. Grinyaev and A. N. Razzhuvalov
pp. 433-438 Full Text: PDF (81 kB)
Characteristics of Gallium Arsenide Structures and Gunn Devices Based on Them Fabricated Using the Radiation���Thermal Technology
M. V. Ardyshev and V. M. Ardyshev
pp. 439-442 Full Text: PDF (54 kB)
The Influence of Carbon on the Properties of Si/SiGe Heterostructures
M. Ya. Valakh, V. N. Dzhagan, L. A. Matveeva, A. S. Oberemok, B. N. Romanyuk, and V. A. Yukhimchuk
pp. 443-447 Full Text: PDF (69 kB)
Effect of Irradiation with Low-Energy Ar Ions on the Characteristics of the Working and Rear Sides of Single-Crystal GaAs Substrate
A. S. Alalykin, P. N. Krylov, I. V. Fedotova, and A. B. Fedotov
pp. 448-451 Full Text: PDF (56 kB)
Generation���Recombination Centers in CdTe:V
L. A. Kosyachenko, S. Yu. Paranchich, Yu. V. Tanasyuk, V. M. Sklyarchuk, E. F. Sklyarchuk, E. L. Maslyanchuk, and V. V. Motushchuk
pp. 452-455 Full Text: PDF (72 kB)
Special Features of Formation and Characteristics of Ni/21R-SiC Schottky Diodes
V. L. Litvinov, K. D. Demakov, O. A. Ageev, A. M. Svetlichny, R. V. Konakova, P. M. Lytvyn, O. S. Lytvyn, and V. V. Milenin
pp. 456-461 Full Text: PDF (235 kB)
LOW-DIMENSIONAL SYSTEMS
Properties of Ge Nanocrystals Formed by Implantation of Ge+ Ions into SiO2 Films with Subsequent Annealing under Hydrostatic Pressure
I. E. Tyschenko, A. B. Talochkin, A. G. Cherkov, K. S. Zhuravlev, A. Misiuk, M. Voelskow, and W. Skorupa
pp. 462-467 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Laser Ultrasonic Study of Porous Silicon Layers
S. M. Zharkii, A. A. Karabutov, I. M. Pelivanov, N. B. Podymova, and V. Yu. Timoshenko
pp. 468-472 Full Text: PDF (72 kB)
Raman Spectroscopy of Amorphous Carbon Modified with Iron
S. G. Yastrebov, V. I. Ivanov-Omskii, F. Dumitrache, and C. Morosanu
pp. 473-476 Full Text: PDF (52 kB)
Electrolytic Fabrication of Porous Silicon with the Use of Internal Current Source
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 477-481 Full Text: PDF (60 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
3C-SiC p���n Structures Grown by Sublimation on 6H-SiC Substrates
A. A. Lebedev, A. M. Strel'chuk, D. V. Davydov, N. S. Savkina, A. S. Tregubova, A. N. Kuznetsov, V. A. Solov'ev, and N. K. Poletaev
pp. 482-484 Full Text: PDF (53 kB)
Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-��m Range
A. P. Astakhova, A. N. Baranov, A. Viset, A. N. Imenkov, N. M. Kolchanova, N. D. Stoyanov, A. Chernyaev, D. A. Yarekha, and Yu. P. Yakovlev
pp. 485-490 Full Text: PDF (80 kB)
PERSONALIA
Vladimir Ivanovich Ivanov-Omskii (dedicated to his 70th birthday)
pp. 491-492 Full Text: PDF (73 kB) | en |
