| dc.description | Semiconductors -- January 2005
Volume 39, Issue 1, pp. 1-159
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Effect of the Parameters of Sapphire Substrates on the Crystalline Quality of GaN Layers
Yu. N. Drozdov, N. V. Vostokov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, O. I. Khrykin, A. S. Filimonov, and V. I. Shashkin
pp. 1-3 Full Text: PDF (108 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Properties of the GaSb:Mn Layers Deposited from Laser Plasma
Yu. A. Danilov, E. S. Demidov, Yu. N. Drozdov, V. P. Lesnikov, and V. V. Podol'skii
pp. 4-7 Full Text: PDF (59 kB)
Effect of the Conditions of Metal���Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films
V. M. Danil'tsev, D. M. Gaponova, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel', D. A. Pryakhin, O. I. Khrykin, and V. I. Shashkin
pp. 8-10 Full Text: PDF (50 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Growth of BGaAs Layers on GaAs Substrates by Metal���Organic Vapor-Phase Epitaxy
D. A. Pryakhin, V. M. Danil'tsev, Yu. N. Drozdov, M. N. Drozdov, D. M. Gaponova, A. V. Murel', V. I. Shashkin, and S. Rushworth
pp. 11-13 Full Text: PDF (53 kB)
Features of GaN Growth Attained by Metal���Organic Vapor-Phase Epitaxy in a Low-Pressure Reactor
O. I. Khrykin, A. V. Butin, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. V. Murel, and V. I. Shashkin
pp. 14-16 Full Text: PDF (53 kB)
LOW-DIMENSIONAL SYSTEMS
Effect of an Interfacial Oxide Layer on the Electroluminescence Efficiency of Metal���Quantum-Confined Semiconductor Heterostructures
N. V. Baidus', P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova
pp. 17-21 Full Text: PDF (125 kB)
Spectra of Persistent Photoconductivity in InAs/AlSb Quantum-Well Heterostructures
V. Ya. Aleshkin, V. I. Gavrilenko, D. M. Gaponova, A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, Yu. G. Sadofyev, S. R. Johnson, and Y.-H. Zhang
pp. 22-26 Full Text: PDF (76 kB)
Long-Time Photoluminescence Kinetics of InAs/AlAs Quantum Dots in a Magnetic Field
T. S. Shamirzaev, A. M. Gilinskii, A. K. Bakarov, A. I. Toropov, S. A. Figurenko, and K. S. Zhuravlev
pp. 27-29 Full Text: PDF (44 kB)
Electroluminescent Properties of Heterostructures with GaInNAs Quantum Wells
A. V. Murel', V. M. Danil'tsev, Yu. N. Drozdov, D. M. Gaponova, V. I. Shashkin, V. B. Shmagin, and O. I. Khrykin
pp. 30-32 Full Text: PDF (49 kB)
A Study of Recombination Centers Related to As���Sb Nanoclusters in Low-Temperature Grown Gallium Arsenide
P. N. Brunkov, A. A. Gutkin, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 33-36 Full Text: PDF (71 kB)
Effect of the Electrochemical Modification of a Thin Ga(In)As Cap Layer on the Energy Spectrum of InAs/GaAs Quantum Dots
I. A. Karpovich, A. V. Zdoroveishchev, S. V. Tikhov, P. B. Demina, and O. E. Khapugin
pp. 37-40 Full Text: PDF (57 kB)
Intersubband Absorption of Light in Heterostructures with Double Tunnel-Coupled GaAs/AlGaAs Quantum Wells
L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, V. V. Kapaev, S. Hanna, S. Schmidt, E. A. Zibik, and A. Seilmeier
pp. 41-43 Full Text: PDF (52 kB)
Current Oscillations under Lateral Transport in GaAs/InGaAs Quantum Well Heterostructures
A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, B. N. Zvonkov, and E. A. Uskova
pp. 44-49 Full Text: PDF (90 kB)
Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules
L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, A. A. Andreev, Yu. B. Samsonenko, A. A. Tonkikh, G. E. Cirlin, N. V. Kryzhanovskaya, V. M. Ustinov, S. Hanna, A. Seilmeier, N. D. Zakharov, and P. Werner
pp. 50-53 Full Text: PDF (76 kB)
Calculation of the States of Shallow Donors in Quantum Wells in a Magnetic Field Using Plane Wave Expansion
V. Ya. Aleshkin and L. V. Gavrilenko
pp. 54-57 Full Text: PDF (49 kB)
The Effect of the Localization in a Quantum Well on the Lifetime of the States of Shallow Impurity Centers
E. E. Orlova, P. Harrison, W.-M. Zhang, and M. P. Halsall
pp. 58-61 Full Text: PDF (65 kB)
Cyclotron Resonance in Doped and Undoped InAs/AlSb Heterostructures with Quantum Wells
V. Ya. Aleshkin, V. I. Gavrilenko, A. V. Ikonnikov, Yu. G. Sadofyev, J. P. Bird, S. R. Johnson, and Y.-H. Zhang
pp. 62-66 Full Text: PDF (65 kB)
Terahertz Luminescence of GaAs-Based Heterostructures with Quantum Wells under the Optical Excitation of Donors
N. A. Bekin, R. Kh. Zhukavin, K. A. Kovalevskii, S. G. Pavlov, B. N. Zvonkov, E. A. Uskova, and V. N. Shastin
pp. 67-72 Full Text: PDF (77 kB)
Efficient Near IR Photoluminescence from Gallium Nitride Layers Doped with Arsenic
A. V. Andrianov, S. V. Novikov, I. S. Zhuravlev, T. Li, R. Xia, S. Bull, I. Harrison, E. C. Larkins, and C. T. Foxon
pp. 73-76 Full Text: PDF (64 kB)
Properties of Structures Based on Laser-Plasma Mn-Doped GaAs and Grown by MOC-Hydride Epitaxy
Yu. V. Vasil'eva, Yu. A. Danilov, Ant. A. Ershov, B. N. Zvonkov, E. A. Uskova, A. B. Davydov, B. A. Aronzon, S. V. Gudenko, V. V. Ryl'kov, A. B. Granovsky, E. A. Gan'shina, N. S. Perov, and A. N. Vinogradov
pp. 77-81 Full Text: PDF (71 kB)
A Study of the Properties of the Structures with Al Nanoclusters Incorporated into the GaAs Matrix
N. V. Vostokov, S. A. Gusev, V. M. Danil'tsev, M. N. Drozdov, Yu. N. Drozdov, A. I. Korytin, A. V. Murel, and V. I. Shashkin
pp. 82-85 Full Text: PDF (161 kB)
InGaAs/GaAs Quantum Dot Heterostructures for 3���5 ��m IR Detectors
A. V. Antonov, D. M. Gaponova, V. M. Danil'tsev, M. N. Drozdov, L. D. Moldavskaya, A. V. Murel', V. S. Tulovchikov, and V. I. Shashkin
pp. 86-88 Full Text: PDF (48 kB)
Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs
I. G. Neizvestny, S. P. Suprun, and V. N. Shumsky
pp. 89-94 Full Text: PDF (80 kB)
Unusual Persistent Photoconductivity in the InAs/AlSb Quantum Well
Yu. G. Sadofyev, A. Ramamoorthy, J. P. Bird, S. R. Johnson, and Y.-H. Zhang
pp. 95-99 Full Text: PDF (66 kB)
Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters
I. P. Soshnikov, N. N. Ledentsov, A. F. Tsatsul'nikov, A. V. Sakharov, W. V. Lundin, E. A. Zavarin, A. V. Fomin, D. Litvinov, E. Hahn, and D. Gerthsen
pp. 100-102 Full Text: PDF (160 kB)
Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination
O. A. Shegai, A. K. Bakarov, A. K. Kalagin, and A. I. Toropov
pp. 103-106 Full Text: PDF (56 kB)
Spin Effects in Magnetoresistance Induced in an n-InxGa1 ��� xAs/GaAs Double Quantum Well by a Parallel Magnetic Field
M. V. Yakunin, G. A. Al'shanskii, Yu. G. Arapov, V. N. Neverov, G. I. Kharus, N. G. Shelushinina, B. N. Zvonkov, E. A. Uskova, A. de Visser, and L. Ponomarenko
pp. 107-112 Full Text: PDF (80 kB)
Terahertz Oscillator Based on Nonlinear Frequency Conversion in a Double Vertical Cavity
Yu. A. Morozov, I. S. Nefedov, V. Ya. Aleshkin, and I. V. Krasnikova
pp. 113-118 Full Text: PDF (83 kB)
Localization of Holes in an InAs/GaAs Quantum-Dot Molecule
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, A. A. Tonkikh, and Yu. G. Musikhin
pp. 119-123 Full Text: PDF (89 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix
Yu. B. Samsonenko, G. E. Cirlin, A. A. Tonkikh, N. K. Polyakov, N. V. Kryzhanovskaya, V. M. Ustinov, L. E. Vorob'ev, D. A. Firsov, V. A. Shalygin, N. D. Zakharov, P. Werner, and A. Andreev
pp. 124-126 Full Text: PDF (108 kB)
Resonant Raman Scattering and Atomic Force Microscopy of InGaAs/GaAs Multilayer Nanostructures with Quantum Dots
M. Ya. Valakh, V. V. Strelchuk, A. F. Kolomys, Yu. I. Mazur, Z. M. Wang, M. Xiao, and G. J. Salamo
pp. 127-131 Full Text: PDF (176 kB)
Photoluminescence and the Raman Scattering in Porous GaSb Produced by Ion Implantation
Yu. A. Danilov, A. A. Biryukov, J. L. Gon�_alves, J. W. Swart, F. Iikawa, and O. Teschke
pp. 132-135 Full Text: PDF (109 kB)
Efficiency of Avalanche Light-Emitting Diodes Based on Porous Silicon
S. K. Lazarouk, A. A. Leshok, V. A. Labunov, and V. E. Borisenko
pp. 136-138 Full Text: PDF (52 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Observation of the Middle-Infrared Emission from Semiconductor Lasers Generating Two Frequency Lines in the Near-Infrared Region of the Spectrum
V. Ya. Aleshkin, V. I. Gavrilenko, S. V. Morozov, K. V. Marem'yanin, B. N. Zvonkov, and S. M. Nekorkin
pp. 139-141 Full Text: PDF (53 kB)
The Resonant Terahertz Response of a Slot Diode with a Two-Dimensional Electron Channel
V. V. Popov, G. M. Tsymbalov, M. S. Shur, and W. Knap
pp. 142-146 Full Text: PDF (61 kB)
Bloch Oscillations in Superlattices: The Problem of a Terahertz Oscillator
Yu. A. Romanov and Yu. Yu. Romanova
pp. 147-155 Full Text: PDF (111 kB)
The Mode Competition, Instability, and Second Harmonic Generation in Dual-Frequency InGaAs/GaAs/InGaP Lasers
V. Ya. Aleshkin, B. N. Zvonkov, S. M. Nekorkin, and Vl. V. Kocharovsky
pp. 156-159 Full Text: PDF (59 kB) | en |
