| dc.description | Semiconductors -- August 2003
Volume 37, Issue 8, pp. 867-997
The Role of Dmitrii Nikolaevich Nasledov in the Formation and Development of the Physics and Technology of III���V Semiconductors
O. V. Emel'yanenko, N. M. Kolchanova, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 867-871 Full Text: PDF (50 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
ESR of Interacting Manganese Centers in Gallium Arsenide
K. F. Shtel'makh, M. P. Korobkov, and I. G. Ozerov
pp. 872-875 Full Text: PDF (59 kB)
Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
T. S. Lagunova, T. I. Voronina, M. P. Mikhailova, K. D. Moiseev, E. Samokhin, and Yu. P. Yakovlev
pp. 876-883 Full Text: PDF (109 kB)
Analysis of the Emission Band of VGaTeAs Complexes in n-GaAs under Uniaxial Pressure
A. A. Gutkin and A. V. Ermakova
pp. 884-888 Full Text: PDF (68 kB)
A M�_ssbauer Study of Fe Impurity Atoms in Gallium Arsenide
P. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, and V. P. Volkov
pp. 889-893 Full Text: PDF (78 kB)
Rare-Earth Elements in the Technology of III���V Compounds and Devices Based on These Compounds
A. T. Gorelenok, A. V. Kamanin, and N. M. Shmidt
pp. 894-914 Full Text: PDF (244 kB)
Electromagnetic Effect in High-Temperature Superconductivity: 15 Years of Investigations (1987���2002) at the Department of Experimental Physics of St. Petersburg State Technical University
A. V. Prikhod'ko
pp. 915-917 Full Text: PDF (85 kB)
The Relaxation of the Neutral State of Manganese in Gallium Arsenide
V. F. Masterov[dagger], K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, and B. E. Samorukov
pp. 918-922 Full Text: PDF (61 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on Boron Phosphide Single Crystals
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 923-926 Full Text: PDF (66 kB)
Negative Luminescence at 3.9 ��m in InGaAsSb-Based Diodes
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 927-930 Full Text: PDF (61 kB)
Wet Chemical Nitridation of (100)GaAs Surface: Effect on Electrical Parameters of Surface-Barrier Au���Ti/GaAs Structures
T. V. L'vova, V. L. Berkovits, M. S. Dunaevskii, V. M. Lantratov, I. V. Makarenko, and V. P. Ulin
pp. 931-935 Full Text: PDF (325 kB)
On the Charge-Transport Mechanisms in Cr���n-InP and Mo���n-InP Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and B. E. Samorukov
pp. 936-939 Full Text: PDF (56 kB)
LOW-DIMENSIONAL SYSTEMS
Raman and Infrared Spectroscopy of GaN Nanocrystals Grown by Chloride-Hydride Vapor-Phase Epitaxy on Oxidized Silicon
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, V. A. Fedirko, and D. R. T. Zahn
pp. 940-943 Full Text: PDF (154 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Ultraviolet Radiation Photodetectors Based on Structures Consisting of a Metal and a Wide-Bandgap Semiconductor
T. V. Blank, Yu. A. Gol'dberg, E. V. Kalinina, O. V. Konstantinov, and E. A. Posse
pp. 944-948 Full Text: PDF (71 kB)
High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-��m Spectral Range with a Large-Diameter Active Area
I. A. Andreev, N. D. Il'inskaya, E. V. Kunitsyna, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 949-954 Full Text: PDF (82 kB)
Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. I. Voronina, T. S. Lagunova, B. V. Pushnyi, and Yu. P. Yakovlev
pp. 955-959 Full Text: PDF (68 kB)
Single-Mode Fast-Tunable Lasers for Laser-Diode Spectroscopy
A. P. Astakhova, T. N. Danilova, A. N. Imenkov, N. M. Kolchanova, and Yu. P. Yakovlev
pp. 960-970 Full Text: PDF (156 kB)
High-Efficiency LEDs of 1.6���2.4 ��m Spectral Range for Medical Diagnostics and Environment Monitoring
N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, A. N. Imenkov, and Yu. P. Yakovlev
pp. 971-984 Full Text: PDF (200 kB)
Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
K. D. Moiseev, M. P. Mikhailova, and Yu. P. Yakovlev
pp. 985-991 Full Text: PDF (100 kB)
LOW-DIMENSIONAL SYSTEMS
Synchrotron Investigations of an Electron Energy Spectrum in III���V-Based Nanostructures
�. P. Domashevskaya, V. A. Terekhov, V. M. Kashkarov, S. Yu. Turishchev, S. L. Molodtsov, D. V. Vyalykh, D. A. Vinokurov, V. P. Ulin, M. V. Shishkov, I. N. Arsent'ev, I. S. Tarasov, and Zh. I. Alferov
pp. 992-997 Full Text: PDF (160 kB) | en |
