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dc.contributor.editorEditor of work here.en_US
dc.contributor.otherPreservation Department, Stony Brook University Libraries.en_US
dc.contributor.otherCataloging & Metadata Department, Stony Brook University Libraries.en_US
dc.date.accessioned2007-06-12T19:33:20Z
dc.date.accessioned2015-04-24T14:42:43Z
dc.date.available2007-06-12T19:33:20Z
dc.date.available2015-04-24T14:42:43Z
dc.date.issued2004-03en_US
dc.identifier.urihttp://hdl.handle.net/1951/41461
dc.identifier.urihttp://hdl.handle.net/11401/70282
dc.descriptionleave(s) : ill; 28 cm.en_US
dc.descriptionSemiconductors -- March 2004 Volume 38, Issue 3, pp. 245-367 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Genesis of Nanoscale Defects and Damage in GaAs Subjected to Multipulse Quasi-Static Photostrains in Micrometer-Sized Regions of Semiconductor S. V. Vintsents, A. V. Zaitseva, V. B. Zaitsev, and G. S. Plotnikov pp. 245-252 Full Text: PDF (148 kB) Effects of Predoping and Implantation Conditions on Diffusion of Silicon in Gallium Arsenide Subjected to Electron-Beam Annealing M. V. Ardyshev, V. M. Ardyshev, and Yu. Yu. Kryuchkov pp. 253-257 Full Text: PDF (69 kB) Simulation of the Concentration Dependence of Boron Diffusion in Silicon O. V. Aleksandrov pp. 258-261 Full Text: PDF (55 kB) Chromium Diffusion in Gallium Arsenide S. S. Khludkov, O. B. Koretskaya, and A. V. Tyazhev pp. 262-265 Full Text: PDF (50 kB) Special Features of Sb2 and Sb4 Incorporation in MBE-Grown AlGaAsSb Alloys A. N. Semenov, V. S. Sorokin, V. A. Solov'ev, B. Ya. Mel'tser, and S. V. Ivanov pp. 266-272 Full Text: PDF (82 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Determination of Gallium Concentration in Germanium Doped Using Neutron-Induced Nuclear Transmutation from Measurements of Resistivity in the Region of Hopping Conductivity O. P. Ermolaev and T. Yu. Mikul'chik pp. 273-276 Full Text: PDF (54 kB) Effect of Uniform Compression on Photoluminescence Spectra of GaAs Layers Heavily Doped with Beryllium T. S. Shamirzaev, K. S. Zhuravlev, J. Bak-Misiuk, A. Misiuk, J. Z. Domagala, and J. Adamczewska pp. 277-280 Full Text: PDF (48 kB) Impedance of Solid Solutions Based on Gallium-Doped Lead Telluride B. A. Akimov, V. V. Pryadun, L. I. Ryabova, and D. R. Khokhlov pp. 281-283 Full Text: PDF (44 kB) Role of Space Charge in the Resistance Formation in a Bipolar Semiconductor Sample A. Konin pp. 284-287 Full Text: PDF (51 kB) Magnetic Investigations of Cd1 ��� xZnxTe (x = 0.12, 0.21) Wide-Gap Semiconductors Yu. V. Shaldin, I. Warchulska, M. Kh. Rabadanov, and V. K. Komar' pp. 288-292 Full Text: PDF (68 kB) Transport Phenomena in Coarse-Grain CdTe Polycrystals S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov pp. 293-297 Full Text: PDF (66 kB) A Critical Analysis of Investigation of Deep Levels in High-Resistivity CdS Single Crystals by Photoelectric Transient Spectroscopy A. P. Odrinskii pp. 298-303 Full Text: PDF (77 kB) The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions A. V. Voznyy and V. G. Deibuk pp. 304-309 Full Text: PDF (122 kB) Optical Properties of Polycrystalline Zinc Selenide A. N. Bryzgalov, V. V. Musatov, and V. V. Buz'ko pp. 310-312 Full Text: PDF (31 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Low-Temperature Relaxation of Elastic Stresses in SiGe/Si Heterostructures Irradiated with Ge+ Ions V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, �. A. Steinman, V. I. Vdovin, and T. G. Yugova pp. 313-318 Full Text: PDF (172 kB) Native Disorder Potential at the Surface of a Heavily Doped Semiconductor V. B. Bondarenko, V. V. Korablev, and Yu. I. Ravich pp. 319-321 Full Text: PDF (45 kB) LOW-DIMENSIONAL SYSTEMS Spectral Line Broadening in Quantum Wells due to the Coulomb Interaction of Carriers A. A. Afonenko pp. 322-328 Full Text: PDF (90 kB) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate V. G. Dubrovskii, Yu. G. Musikhin, G. �. Cirlin, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, A. A. Tonkikh, N. V. Kryzhanovskaya, N. A. Bert, and V. M. Ustinov pp. 329-334 Full Text: PDF (191 kB) Quantum Confined Stark Effect and Electroabsorption in Semiconductor Spherical Layers V. A. Arutyunyan, K. S. Aramyan, and G. Sh. Petrosyan pp. 335-339 Full Text: PDF (70 kB) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, and D. Bimberg pp. 340-343 Full Text: PDF (205 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films S. K. Persheyev, P. R. Drapacz, M. J. Rose, and A. G. Fitzgerald pp. 344-346 Full Text: PDF (46 kB) PHYSICS OF SEMICONDUCTOR DEVICES Temperature Dependence of Electroluminescence of Er Ions in Tunnel Diodes Based on (111)Si:(Er, O) A. M. Emel'yanov and N. A. Sobolev pp. 347-351 Full Text: PDF (63 kB) Blue���Green Radiation in GaAs-Based Quantum-Well Lasers N. V. Baidus', A. A. Biryukov, B. N. Zvonkov, S. M. Nekorkin, and V. Ya. Aleshkin pp. 352-354 Full Text: PDF (47 kB) GaAs/Ge Heterostructure Photovoltaic Cells Fabricated by a Combination of MOCVD and Zinc Diffusion Techniques V. M. Andreev, V. P. Khvostikov, N. A. Kalyuzhnyi, S. S. Titkov, O. A. Khvostikova, and M. Z. Shvarts pp. 355-359 Full Text: PDF (74 kB) Internal Optical Loss in Semiconductor Lasers N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov pp. 360-367 Full Text: PDF (98 kB)en
dc.formatMonograph.en_US
dc.format.extent1841224 bytes
dc.format.extent8465 bytes
dc.format.mediumElectronic Resource.en_US
dc.format.mimetypeapplication/pdf
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dc.language.isoen_USen
dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherStony Brook University.en_US
dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 03en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 38, I. 03en
dc.typeOther.en_US
dc.description.contributorThe content contained herein is maintained and curated by the Preservation Department.en_US
dc.description.contributorThis record is revised and maintained by the content administrators from the Cataloging & Metadata Department.en_US
dc.publisher.locationStony Brook, NY.en_US


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