| dc.description | Semiconductors -- June 2004
Volume 38, Issue 6, pp. 615-735
REVIEW
Magnetic Properties of Carbon Structures
T. L. Makarova
pp. 615-638 Full Text: PDF (689 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
A Study of Recombination Centers in Irradiated p-Si Crystals
T. A. Pagava
pp. 639-643 Full Text: PDF (81 kB)
Long-Wavelength Edge of the Spectrum of Hot Electron���Hole Plasma Radiation in Photoexcited Indium Arsenide
E. Shatkovskis and A. Cesnys
pp. 644-647 Full Text: PDF (53 kB)
A Protrusion in the Absorption Spectra of GaAs Excited by High-Power Picosecond Light Pulses
G. S. Altybaev, I. L. Bronevoi, and S. E. Kumekov
pp. 648-651 Full Text: PDF (60 kB)
Photosensitive Polyimides Containing Substituted Diphenylmethane Fragments in the Backbone
E. L. Aleksandrova, G. I. Nosova, N. A. Solovskaya, K. A. Romashkova, V. A. Luk'yashina, E. V. Konozobko, and V. V. Kudryavtsev
pp. 652-656 Full Text: PDF (82 kB)
Analysis of Polarization Modulation Spectra of Photopleochroism Induced by Uniaxial Compression in Ge Crystals
I. E. Matyash and B. K. Serdega
pp. 657-662 Full Text: PDF (77 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Physical Mechanisms of Laser Correction and Stabilization of the Parameters of Al���n���n+-Si���Al Schottky Barrier Structures
G. I. Vorobets, M. M. Vorobets, V. N. Strebezhev, E. V. Buzaneva, and A. G. Shkavro
pp. 663-665 Full Text: PDF (84 kB)
Slow Relaxation of Conductance of Quasi-Two-Dimensional Highly Disordered MIS Structures
A. B. Davydov and B. A. Aronzon
pp. 666-671 Full Text: PDF (88 kB)
Fabrication and Properties of an n-ZnO:Ga/p-GaN:Mg/alpha-Al2O3 Heterojunction
B. M. Ataev, Ya. I. Alivov, V. V. Mamedov, S. Sh. Makhmudov, and B. A. Magomedov
pp. 672-674 Full Text: PDF (53 kB)
High-Frequency Barrier Capacitance of Metal���Semiconductor Contacts and Abrupt p���n Junctions
V. I. Murygin
pp. 675-677 Full Text: PDF (35 kB)
Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition
W. V. Lundin, A. V. Sakharov, A. F. Tsatsul'nikov, E. E. Zavarin, A. I. Besyul'kin, A. V. Fomin, and D. S. Sizov
pp. 678-682 Full Text: PDF (58 kB)
Structural Defects at the Semiconductor���Ferroelectric Interface
L. S. Berman and I. E. Titkov
pp. 683-688 Full Text: PDF (78 kB)
LOW-DIMENSIONAL SYSTEMS
Electron���Electron Scattering in Stepped Quantum Wells
V. L. Zerova, L. E. Vorob'ev, and G. G. Zegrya
pp. 689-695 Full Text: PDF (94 kB)
Spectroscopy of Exciton States of InAs Quantum Molecules
V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, B. V. Novikov, G. �. Cirlin, Yu. B. Samsonenko, A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, and V. M. Ustinov
pp. 696-701 Full Text: PDF (152 kB)
Role of Si-Doped Al0.3Ga0.7As Layers in the High-Frequency Conductivity of GaAs/Al0.3Ga0.7As Heterostructures under Conditions of the Quantum Hall Effect
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, Yu. M. Gal'perin, V. V. Preobrazhenskii, and A. I. Toropov
pp. 702-711 Full Text: PDF (156 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Formation of Thick Porous Silicon Layers with Insufficient Minority Carrier Concentration
D. N. Goryachev, L. V. Belyakov, and O. M. Sreseli
pp. 712-716 Full Text: PDF (142 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Transformation of a Short-Wavelength Emission Band of a Double-Charged Intrinsic Acceptor into a Long-Wavelength Band in GaSb-Based LEDs
E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova, M. A. Sipovskaya, N. V. Blasenko, and Yu. P. Yakovlev
pp. 717-723 Full Text: PDF (196 kB)
Soft Breakdown as a Cause of Current Drop in an MOS Tunnel Structure
A. F. Shulekin, S. �. Tyaginov, R. Khlil, A. El Hdiy, and M. I. Vexler
pp. 724-726 Full Text: PDF (54 kB)
Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
L. Ya. Karachinsky, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, A. R. Kovsh, J. S. Wang, R. S. Hsiao, J. Y. Chi, V. M. Ustinov, and N. N. Ledentsov
pp. 727-731 Full Text: PDF (70 kB)
High-Power 1.5 ��m InAs���InGaAs Quantum Dot Lasers on GaAs Substrates
M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil'ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, and Zh. I. Alferov
pp. 732-735 Full Text: PDF (108 kB) | en |
