| dc.description | Semiconductors -- July 2004
Volume 38, Issue 7, pp. 737-861
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Interphase Interactions and Features of Structural Relaxation in TiBx���n-GaAs (InP, GaP, 6H-SiC) Contacts Subjected to Active Treatment
N. S. Boltovets, V. N. Ivanov, R. V. Konakova, Ya. Ya. Kudrik, O. S. Litvin, P. M. Litvin, and V. V. Milenin
pp. 737-741 Full Text: PDF (392 kB)
Local Symmetry of the Pb1 ��� xSnxSe Lattice near the Zero-Gap State
E. S. Khuzhakulov
pp. 742-744 Full Text: PDF (54 kB)
Promotion of Metallurgical Reactions at the Ni���SiC Interface by Irradiation with Protons
V. V. Kozlovskii, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, and T. P. Samsonova
pp. 745-750 Full Text: PDF (75 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Study of the Electrical Properties of CdxHg1 ��� xTe
P. V. Biryulin, V. I. Kosheleva, and V. I. Turinov
pp. 751-757 Full Text: PDF (98 kB)
Formation of Electrically Active Centers in Silicon Irradiated with Electrons and Then Annealed at Temperatures of 400���700��C
E. P. Neustroev, S. A. Smagulova, I. V. Antonova, and L. N. Safronov
pp. 758-762 Full Text: PDF (64 kB)
The Role of Trapping Levels of Nonequilibrium Electrons during the Formation of Pinning Centers for Domain Walls in the Magnetic Semiconductor CdCr2Se4
A. A. Abdullaev
pp. 763-768 Full Text: PDF (78 kB)
Electrical Properties and Limiting Position of the Fermi Level in InSb Irradiated with Protons
V. N. Brudnyi, V. M. Boiko, I. V. Kamenskaya, and N. G. Kolin
pp. 769-774 Full Text: PDF (97 kB)
Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon
D. I. Tetelbaum, E. I. Zorin[dagger], and N. V. Lisenkova
pp. 775-777 Full Text: PDF (35 kB)
Specific Thermoelectric Properties of Lightly Doped Bi2(TeSe)3 Solid Solutions
P. P. Konstantinov, L. V. Prokof'eva, Yu. I. Ravich, M. I. Fedorov, and V. V. Kompaniets
pp. 778-781 Full Text: PDF (63 kB)
Specific Features of Electron Spin Resonance in 4H-SiC in the Vicinity of the Insulator���Metal Phase Transition: II. Analysis of the Width and Shape of Lines
A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, and E. N. Mokhov
pp. 782-787 Full Text: PDF (83 kB)
Localization of a Longitudinal Autosoliton in InSb
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 788-790 Full Text: PDF (68 kB)
Piezospectroscopic Study of the Emission Band of n-GaAs:S Peaked at about 1.2 eV
A. A. Gutkin and M. A. Reshchikov
pp. 791-795 Full Text: PDF (67 kB)
Hysteresis in Ag2Te near and within the Phase Transition Region
S. A. Aliev
pp. 796-799 Full Text: PDF (60 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Resistance of Proton-Irradiated GaAs Photodetectors to Combined Gamma and Neutron Radiation
A. V. Murel', S. V. Obolenskii, A. G. Fefelov, and E. V. Kiseleva
pp. 800-806 Full Text: PDF (83 kB)
Radiation Resistance of Transistor- and Diode-Type SiC Detectors Irradiated with 8-MeV Protons
N. B. Strokan, A. M. Ivanov, N. S. Savkina, A. A. Lebedev, V. V. Kozlovskii, M. Syvajarvi, and R. Yakimova
pp. 807-811 Full Text: PDF (77 kB)
LOW-DIMENSIONAL SYSTEMS
Nonlinear Properties of Phototropic Media on the Basis of CuxSe Nanoparticles in Quartz Glass
S. A. Zolotovskaya, N. N. Posnov, P. V. Prokosin, K. V. Yumashev, V. S. Gurin, and A. A. Alexeenko
pp. 812-817 Full Text: PDF (90 kB)
Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure
I. E. Tyschenko and L. Rebohle
pp. 818-823 Full Text: PDF (91 kB)
The Effect of Acoustic Phonon Confinement on Electron Scattering in GaAs/AlxGa1 ��� xAs Superlattices
S. I. Borisenko
pp. 824-829 Full Text: PDF (75 kB)
Kapitsa Effect in Crystals with Superlattices
P. V. Gorskii
pp. 830-832 Full Text: PDF (39 kB)
Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 ��� xAs Matrix on a GaAs Substrate
N. V. Kryzhanovskaya, A. G. Gladyschev, S. A. Blokhin, Yu. G. Musikhin, A. E. Zhukov, M. V. Maksimov, N. D. Zakharov, A. F. Tsatsul'nikov, N. N. Ledentsov, P. Werner, F. Guffart, and D. Bimberg
pp. 833-836 Full Text: PDF (182 kB)
Mechanism of Dicke Superradiance in Semiconductor Heterostructures
L. Ya. Karachinsky, I. I. Novikov, N. Yu. Gordeev, and G. G. Zegrya
pp. 837-841 Full Text: PDF (66 kB)
Manifestation of Size-Related Quantum Oscillations of the Radiative Exciton Recombination Time in the Photoluminescence of Silicon Nanostructures
A. V. Sachenko, Yu. V. Kryuchenko, I. O. Sokolovskii, and O. M. Sreseli
pp. 842-848 Full Text: PDF (93 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Ultraviolet Luminescence of ZnO Infiltrated into an Opal Matrix
V. M. Masalov, �. N. Samarov, G. I. Volkodav[dagger], G. A. Emel'chenko, A. V. Bazhenov, S. I. Bozhko, I. A. Karpov, A. N. Gruzintsev, and E. E. Yakimov
pp. 849-854 Full Text: PDF (98 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Leakage Currents over the Surface of CdHgTe-Based Photodiodes
P. V. Biryulin, V. I. Turinov, and E. B. Yakimov
pp. 855-861 Full Text: PDF (162 kB) | en |
