| dc.description | Semiconductors -- December 2005
Volume 39, Issue 12, pp. 1361-1432
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Electroluminescence of Graded-gap Structures with Blocking and Ohmic Contacts
B. S. Sokolovskii, V. I. Ivanov-Omskii, and G. A. Il'chuk
pp. 1361-1368 Full Text: PDF (99 kB)
M�_ssbauer Study of the Ge Two-Electron Donor Centers in PbSe
E. I. Terukov and �. S. Khuzhakulov
pp. 1369-1370 Full Text: PDF (36 kB)
Electron Exchange between Neutral and Ionized Germanium Centers in PbSe
E. I. Terukov and �. S. Khuzhakulov
pp. 1371-1373 Full Text: PDF (38 kB)
Characterization of Photonic Crystals Based on Opal���Semiconductor Composites by Bragg Reflection Spectroscopy
G. M. Gadzhiev, V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel'kin, and V. V. Travnikov
pp. 1374-1380 Full Text: PDF (89 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 1381-1386 Full Text: PDF (96 kB)
Simulation of the Capacitance���Voltage Characteristics of a Ferroelectric Material
L. S. Berman
pp. 1387-1390 Full Text: PDF (49 kB)
Estimation of the Energy Characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC Heterojunctions
S. Yu. Davydov, A. A. Lebedev, and O. V. Posrednik
pp. 1391-1393 Full Text: PDF (48 kB)
Measurement of Micrometer Diffusion Lengths by Nuclear Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syv�_j�_rvi, and R. Yakimova
pp. 1394-1398 Full Text: PDF (68 kB)
Light-Emitting Si:Er Structures Produced by Molecular-Beam Epitaxy: High-Resolution Photoluminescence Spectroscopy
D. I. Kryzhkov, N. A. Sobolev, B. A. Andreev, D. V. Denisov, Z. F. Krasil'nik, and E. I. Shek
pp. 1399-1402 Full Text: PDF (53 kB)
Electrical Properties of n-GaN/p-SiC Heterojunctions
O. Yu. Ledyaev, A. M. Strel'chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev
pp. 1403-1405 Full Text: PDF (51 kB)
Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to gamma-ray Radiation
V. V. Emtsev, Yu. A. Nikolaev, D. S. Poloskin, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and M. V. Yakushev
pp. 1406-1409 Full Text: PDF (78 kB)
LOW-DIMENSIONAL SYSTEMS
The Tail of Localized States in the Band Gap of the Quantum Well in the In0.2Ga0.8N/GaN System and Its Effect on the Laser-Excited Photoluminescence Spectrum
M. A. Jacobson, D. K. Nelson, O. V. Konstantinov, and A. V. Matveentsev
pp. 1410-1414 Full Text: PDF (69 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-��m Spectral Region
L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg
pp. 1415-1419 Full Text: PDF (72 kB)
The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry
N. B. Strokan, A. M. Ivanov, A. A. Lebedev, M. Syv�_j�_rvi, and R. Yakimova
pp. 1420-1425 Full Text: PDF (72 kB)
"Ideal" Static Breakdown in High-Voltage (1 kV) 4H-SiC p���n Junction Diodes with Guard Ring Termination
P. A. Ivanov, I. V. Grekhov, N. D. Il'inskaya, and T. P. Samsonova
pp. 1426-1428 Full Text: PDF (53 kB)
PERSONALIA
Yurii Vasil'evich Shmartsev (On the 75th Anniversary of His Birth)
pp. 1429-1430 Full Text: PDF (82 kB)
Boris Vasil'evich Tsarenkov (On the 75th Anniversary of His Birth)
pp. 1431-1432 Full Text: PDF (57 kB) | en |
