Show simple item record

dc.identifier.urihttp://hdl.handle.net/1951/59570
dc.identifier.urihttp://hdl.handle.net/11401/71144
dc.description.sponsorshipThis work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree.en_US
dc.formatMonograph
dc.format.mediumElectronic Resourceen_US
dc.language.isoen_US
dc.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dc.typeThesis
dcterms.abstractAs conventional integrated circuits are approaching the physical limits due to technology scaling, alternative and complementary technologies have become a major focus. Among various emerging technologies, three-dimensional (3-D) integration technology offers several advantages to increase performance and functionality while reducing cost. In 3-D technologies, multiple dies are stacked in a monolithic fashion where the communication among the dies is achieved by vertical through-silicon vias (TSVs). Despite important advantages, 3-D integration has certain challenges that need to be addressed. In this thesis, noise coupling due to TSVs, an important issue that degrades signal integrity, is investigated. Compact models are proposed to analyze TSV related noise coupling for different TSV types such as via-first and via-last, and different substrate grounding topologies. Figures-of-merit and design guidelines are also developed to ensure reliable 3-D circuits in the presence of TSV related noise coupling.
dcterms.available2013-05-22T17:34:06Z
dcterms.available2015-04-24T14:46:09Z
dcterms.contributorSalman, Emreen_US
dcterms.contributorStanacevic, Milutinen_US
dcterms.creatorAsgari, Mohammad Hosein
dcterms.dateAccepted2013-05-22T17:34:06Z
dcterms.dateAccepted2015-04-24T14:46:09Z
dcterms.dateSubmitted2013-05-22T17:34:06Z
dcterms.dateSubmitted2015-04-24T14:46:09Z
dcterms.descriptionDepartment of Electrical Engineeringen_US
dcterms.extent42 pg.en_US
dcterms.formatMonograph
dcterms.formatApplication/PDFen_US
dcterms.identifierAsgari_grad.sunysb_0771M_10782en_US
dcterms.identifierhttp://hdl.handle.net/1951/59570
dcterms.identifierhttp://hdl.handle.net/11401/71144
dcterms.issued2011-12-01
dcterms.languageen_US
dcterms.provenanceMade available in DSpace on 2013-05-22T17:34:06Z (GMT). No. of bitstreams: 1 Asgari_grad.sunysb_0771M_10782.pdf: 7698114 bytes, checksum: 433acbb14a103a0830ce82a9c6e1457f (MD5) Previous issue date: 1en
dcterms.provenanceMade available in DSpace on 2015-04-24T14:46:09Z (GMT). No. of bitstreams: 3 Asgari_grad.sunysb_0771M_10782.pdf.jpg: 1894 bytes, checksum: a6009c46e6ec8251b348085684cba80d (MD5) Asgari_grad.sunysb_0771M_10782.pdf.txt: 31043 bytes, checksum: 24e9a8f6fde084dcd3fd8765da678f3e (MD5) Asgari_grad.sunysb_0771M_10782.pdf: 7698114 bytes, checksum: 433acbb14a103a0830ce82a9c6e1457f (MD5) Previous issue date: 1en
dcterms.publisherThe Graduate School, Stony Brook University: Stony Brook, NY.
dcterms.subjectElectrical engineering
dcterms.subjectSubstrate Noise, Three Dimensional Circuits, TSV coupling
dcterms.titleThrough-Silicon Via (TSV) Related Noise Coupling in Three-Dimensional (3-D) Integrated Circuits (ICs)
dcterms.typeThesis


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record