| dc.identifier.uri | http://hdl.handle.net/1951/55644 | |
| dc.identifier.uri | http://hdl.handle.net/11401/72694 | |
| dc.description.sponsorship | This work is sponsored by the Stony Brook University Graduate School in compliance with the requirements for completion of degree. | en_US |
| dc.format | Monograph | |
| dc.format.medium | Electronic Resource | en_US |
| dc.language.iso | en_US | |
| dc.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dc.type | Dissertation | |
| dcterms.abstract | This work presents results of an experimental study of electron transport through few nanometer-scale metal oxide junctions of two types:First, we have measured transport properties of Nb/Al/Nb junctions fabricated using thermal oxidation or rf-plasma oxidation at various conditions, with rapid thermal post-annealing (RTA) to improve junction endurance in electric fields in excess of 10 MV/cm. The results indicate that such junctions may combine high field endurance (corresponding to at least 10^10 write/erase cycles in floating-gate memories) and high current density (corresponding to 30-ns-scale write/erase time) at high voltages, with very low conductance (corresponding to retention time scale ~0.1 s) at low voltages. We discuss the improvements necessary for the use of such junctions in advanced floating-gate memories.Second, we have studied resistive bistability (memory) effects in junctions based on several metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the practical use of such junctions, in particular as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high switching endurance (over 1000 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 1000, though the sample-to-sample reproducibility is so far still lower than that required for large scale integration. | |
| dcterms.available | 2012-05-15T18:07:07Z | |
| dcterms.available | 2015-04-24T14:53:15Z | |
| dcterms.contributor | James E. Lukens | en_US |
| dcterms.contributor | Likharev, Konstantin K. | en_US |
| dcterms.contributor | Ismail Zahed | en_US |
| dcterms.contributor | Andreas Mayr. | en_US |
| dcterms.creator | Tan, Zhongkui | |
| dcterms.dateAccepted | 2012-05-15T18:07:07Z | |
| dcterms.dateAccepted | 2015-04-24T14:53:15Z | |
| dcterms.dateSubmitted | 2012-05-15T18:07:07Z | |
| dcterms.dateSubmitted | 2015-04-24T14:53:15Z | |
| dcterms.description | Department of Physics | en_US |
| dcterms.format | Monograph | |
| dcterms.format | Application/PDF | en_US |
| dcterms.identifier | http://hdl.handle.net/1951/55644 | |
| dcterms.identifier | Tan_grad.sunysb_0771E_10020.pdf | en_US |
| dcterms.identifier | http://hdl.handle.net/11401/72694 | |
| dcterms.issued | 2010-05-01 | |
| dcterms.language | en_US | |
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Previous issue date: 1 | en |
| dcterms.provenance | Made available in DSpace on 2015-04-24T14:53:15Z (GMT). No. of bitstreams: 3
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Previous issue date: 1 | en |
| dcterms.publisher | The Graduate School, Stony Brook University: Stony Brook, NY. | |
| dcterms.subject | Physics, Condensed Matter | |
| dcterms.subject | crested barrier, electron transport, metal oxide, rapid thermal annealing, reproducibility, resistive bistability | |
| dcterms.title | Experimental Study of Electron Transport through Nanometer-Scale Metal-Oxide Junctions | |
| dcterms.type | Dissertation | |
