| dc.description | Semiconductors -- July 2000
Volume 34, Issue 7, pp. 741-860
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations
G. B. Galiev, V. �. Kaminskii, V. G. Mokerov, V. K. Nevolin, V. V. Saraikin, and Yu. V. Slepnev
pp. 741-745 Full Text: PDF (126 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
The Magnetoresistance of Compensated Ge:As at Microwave Frequencies in the Vicinity of the Metal���Insulator Phase Transition
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 746-754 Full Text: PDF (138 kB)
The Role of Nonequilibrium Carriers in Linear Charge Transport (Ohm's Law)
Yu. G. Gurevich, G. N. Logvinov, G. Espejo, O. Yu. Titov, and A. Meriuts
pp. 755-758 Full Text: PDF (48 kB)
Liquid Phase Reflectivity under Conditions of Laser-Induced Silicon Melting
G. D. Ivlev and E. I. Gatskevich
pp. 759-762 Full Text: PDF (59 kB)
Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg1 ��� xCdxTe
E. F. Venger, S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, and G. A. Shepel'skii
pp. 763-767 Full Text: PDF (68 kB)
Hysteresis of Magnetoresistance in Neutron-Transmutation-Doped Ge in the Region of Hopping Transport over the Coulomb-Gap States
A. G. Andreev, S. V. Egorov, A. G. Zabrodskii, R. V. Parfen'ev, and A. V. Chernyaev
pp. 768-774 Full Text: PDF (130 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Role of Impact Ionization in the Formation of Reverse Current���Voltage Characteristics of Al���SiO2���n-Si Tunnel Structures
M. I. Vexler, I. V. Grekhov, and A. F. Shulekin
pp. 775-780 Full Text: PDF (86 kB)
Photosensitivity of Structures Based on ZnSe Single Crystals
G. A. Il'chuk, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, V. I. Ivanov-Omskii, and N. A. Ukrainets
pp. 781-785 Full Text: PDF (78 kB)
Analysis of Charges and Surface States at the Interfaces of Semiconductor���Insulator���Semiconductor Structures
L. S. Berman, E. I. Belyakova, L. S. Kostina, E. D. Kim, and S. C. Kim
pp. 786-789 Full Text: PDF (55 kB)
Polarization Photosensitivity of a-Si:H/c-Si Heterojunctions
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 790-793 Full Text: PDF (57 kB)
Photosensitivity of In���SiO2���Cd0.28Hg0.72Te Structures with a Nontransparent Field Electrode
V. N. Ovsyuk, V. V. Vasil'ev, and Yu. P. Mashukov
pp. 794-798 Full Text: PDF (70 kB)
The Hall Effect in Fe Submonolayer Systems on n- and p-type Si(111)
N. G. Galkin, D. L. Goroshko, A. V. Konchenko, E. S. Zakharova, and S. Ts. Krivoshchapov
pp. 799-802 Full Text: PDF (59 kB)
LOW-DIMENSIONAL SYSTEMS
Negative Differential Conductance and the Bloch Oscillations in the Natural Superlattice of 8H Silicon Carbide Polytype
V. I. Sankin and A. A. Lepneva
pp. 803-806 Full Text: PDF (47 kB)
Plasma Oscillations in Two-Dimensional Semiconductor Superstructures
S. Yu. Glazov and S. V. Kryuchkov
pp. 807-809 Full Text: PDF (44 kB)
Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov, P. Werner, V. M. Ustinov, D. V. Denisov, N. N. Ledentsov, and Zh. I. Alferov
pp. 810-814 Full Text: PDF (811 kB)
Impurity Absorption of Light in Confined Systems Subjected to a Longitudinal Magnetic Field
�. P. Sinyavskii and S. M. Sokovnich
pp. 815-816 Full Text: PDF (39 kB)
Charge Carrier Interference in One-Dimensional Semiconductor Rings
N. T. Bagraev, A. D. Buravlev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, S. A. Rykov, and I. A. Shelykh
pp. 817-824 Full Text: PDF (190 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Simulation of Photochemical Transformations and Photodarkening in Photoresist Films Exposed to Pulsed Vacuum-Ultraviolet Radiation
N. A. Kaliteevskaya and R. P. Seisyan
pp. 825-828 Full Text: PDF (61 kB)
The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition
E. I. Terukov, M. M. Kazanin, O. I. Kon'kov, V. Kh. Kudoyarova, K. V. Kougiya, Yu. A. Nikulin, and A. G. Kazanskii
pp. 829-834 Full Text: PDF (95 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Fringing Field of High-Voltage Planar p���i���n Diodes with a Nonuniformly Doped Guard Ring
A. S. Kyuregyan
pp. 835-843 Full Text: PDF (109 kB)
Study of the Effect of Graded Gap Epilayers on the Performance of CdxHg1 ��� xTe Photodiodes
V. V. Vasil'ev, D. G. Esaev, A. F. Kravchenko, V. M. Osadchii, and A. O. Suslyakov
pp. 844-847 Full Text: PDF (53 kB)
InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (lambda = 3.0���3.3 ��m) for Diode Laser Spectroscopy
M. Aidaraliev, T. Beyer, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin
pp. 848-852 Full Text: PDF (80 kB)
Properties of Wide-Mesastripe InGaAsP/InP Lasers
E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, and Zh. I. Alferov
pp. 853-856 Full Text: PDF (57 kB)
PERSONALIA
Zhores Ivanovich Alferov (dedicated to his 70th birthday)
pp. 857-860 Full Text: PDF (159 kB) | en |
