| dc.description | Semiconductors -- October 2000
Volume 34, Issue 10, pp. 1103-1228
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si1 ��� xGex Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH4
L. K. Orlov, N. L. Ivina, and A. V. Potapov
pp. 1103-1108 Full Text: PDF (88 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Hot-Electron Capture by Negatively Charged Centers in an Approximation of Quasi-elastic Scattering
Z. S. Kachlishvili and N. K. Metreveli
pp. 1109-1111 Full Text: PDF (43 kB)
A Verification of the Applicability of the Monovalent-Defect Model to the Description of Properties of the Vacancy���Oxygen Complex in Silicon
L. F. Makarenko
pp. 1112-1115 Full Text: PDF (64 kB)
Space-Charge-Limited Currents in a Synthetic Semiconducting Diamond
Yu. A. Detchuev, V. A. Kryachkov, �. G. Pel', and N. G. Sanzharlinskii
pp. 1116-1119 Full Text: PDF (67 kB)
Optical Properties of Ca4Ga2S7:Eu2+
B. G. Tagiev, U. F. Kasumov, N. N. Musaeva, R. B. Dzhabbarov, and A. S. Abushov
pp. 1120-1123 Full Text: PDF (62 kB)
Dielectric Properties of Cd1 ��� xFexSe Compounds
P. V. Zukowski, J. Partyka, P. Wagierek, Yu. Shostak, Yu. Sidorenko, and A. Rodzik
pp. 1124-1127 Full Text: PDF (79 kB)
Luminescent ZnS:Cu Films Prepared by Chemical Methods
S. V. Svechnikov, L. V. Zav'yalova, N. N. Roshchina, V. E. Rodionov, V. S. Khomchenko, L. I. Berezhinskii, I. V. Prokopenko, P. M. Litvin, O. S. Litvin, Yu. V. Kolomzarov, and Yu. A. Tsyrkunov
pp. 1128-1132 Full Text: PDF (307 kB)
Structural Defects and Deep-Level Centers in 4H-SiC Epilayers Grown by Sublimational Epitaxy in Vacuum
A. A. Lebedev, D. V. Davydov, N. S. Savkina, A. S. Tregubova, M. P. Shcheglov, R. Yakimova, M. Syv�_j�_rvi, and E. Janz�n
pp. 1133-1136 Full Text: PDF (50 kB)
Special Features of Photoelectric Properties of p-CdxHg1 ��� xTe Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress
S. G. Gasan-Zade, S. V. Staryi, M. V. Strikha, and G. A. Shepel'skii
pp. 1137-1143 Full Text: PDF (82 kB)
Instability of DX-like Impurity Centers in PbTe:Ga at Annealing
D. E. Dolzhenko, V. N. Demin, I. I. Ivanchik, and D. R. Khokhlov
pp. 1144-1146 Full Text: PDF (44 kB)
Effect of Doping with Gadolinium on the Physical Properties of Hg3In2Te6
O. G. Grushka, P. M. Gorlei, A. V. Bestsennyi, and Z. M. Grushka
pp. 1147-1150 Full Text: PDF (64 kB)
Comparison of the Polarizations of the 1.2-eV Photoluminescence Band in n-GaAs:Te under Uniaxial Pressure and Resonance Polarized Excitation
A. A. Gutkin, M. A. Reshchikov, and V. E. Sedov
pp. 1151-1156 Full Text: PDF (85 kB)
Evolution of the Density of States during Phase Transitions in Films of Cadmium Sulfotellurides Synthesized under Profoundly Nonequilibrium Conditions
A. P. Belyaev, V. P. Rubets, and M. Yu. Nuzhdin
pp. 1157-1160 Full Text: PDF (62 kB)
Band Gap Estimation for a Triaminotrinitrobenzene Molecular Crystal by the Density-Functional Method
K. F. Grebenkin and A. L. Kutepov
pp. 1161-1162 Full Text: PDF (22 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Static and High-Frequency Transverse Electrical Conductivity of Isotypical Silicon Structures Obtained by Direct Bonding
V. A. Stuchinskii and G. N. Kamaev
pp. 1163-1171 Full Text: PDF (135 kB)
Influence of an Electric Field on the Strained State of a Heterostructure
R. M. Peleshchak, B. A. Lukiyanets, and G. G. Zegrya
pp. 1172-1176 Full Text: PDF (62 kB)
Effect of Low-Temperature Interphase Charge Transport at the Si/SiO2 Interface on the Photoresponse of Silicon Barrier Structures
N. I. Bochkareva and S. A. Khorev
pp. 1177-1182 Full Text: PDF (110 kB)
A Study of an Al���Ge3N4���Ge Structure by the Method of Photo-Capacitance���Voltage Characteristics
R. B. Dzhanelidze, M. B. Dzhanelidze, and M. R. Katsiashvili
pp. 1183-1185 Full Text: PDF (42 kB)
ZnMgSe/ZnCdSe-Based Distributed Bragg Mirrors Grown by Molecular-Beam Epitaxy on ZnSe Substrates
V. I. Kozlovskii, P. A. Trubenko, Yu. V. Korostelin, and V. V. Roddatis
pp. 1186-1192 Full Text: PDF (381 kB)
LOW-DIMENSIONAL SYSTEMS
On the Theory of Photoionization of Deep-Level Impurity Centers in a Parabolic Quantum Well
V. D. Krevchik, R. V. Zaitsev, and V. V. Evstifeev
pp. 1193-1198 Full Text: PDF (121 kB)
A Model of Conduction in Carbon Nanopipe Bundles and Films
V. �. Kaminskii
pp. 1199-1202 Full Text: PDF (52 kB)
Recombination of Self-Trapped Excitons in Silicon Nanocrystals Grown in Silicon Oxide
K. S. Zhuravlev and A. Yu. Kobitsky
pp. 1203-1206 Full Text: PDF (70 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Anomalous Dispersion, Differential Gain, and Dispersion of the alpha-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers
A. P. Bogatov, A. E. Boltaseva, A. E. Drakin, M. A. Belkin, and V. P. Konyaev
pp. 1207-1213 Full Text: PDF (89 kB)
An Artificially Anisotropic Thermoelectric Material with Semiconducting and Superconducting Layers
D. A. Pshenai-Severin, Yu. I. Ravich, and M. V. Vedernikov
pp. 1214-1218 Full Text: PDF (68 kB)
Injection Currents in Silicon Structures with Blocked Hopping Conduction
D. G. Esaev and S. P. Sinitsa
pp. 1219-1223 Full Text: PDF (65 kB)
Charge Transport Mechanism and Photoelectric Characteristics of n+-Si���n-Si���Al2O3���Pd Diode Structures
S. V. Slobodchikov, Kh. M. Salikhov, and E. V. Russu
pp. 1224-1228 Full Text: PDF (79 kB) | en |
