| dc.description | Semiconductors -- November 2000
Volume 34, Issue 11, pp. 1229-1354
REVIEWS
Silicon���Germanium Nanostructures with Quantum Dots: Formation Mechanisms and Electrical Properties
O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, and B. Voigtl�_nder
pp. 1229-1247 Full Text: PDF (436 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped AlxGa1 ��� xN Epilayers on Sapphire
A. S. Usikov, V. V. Tret'yakov, A. V. Bobyl', R. N. Kyutt, W. V. Lundin, B. V. Pushnyi, and N. M. Shmidt
pp. 1248-1254 Full Text: PDF (164 kB)
Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap
L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, and I. S. Tarasov
pp. 1255-1258 Full Text: PDF (293 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Influence of Heat Treatment on Luminescence of Semi-Insulating Undoped GaAs Crystals
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, and O. N. Stril'chuk
pp. 1259-1263 Full Text: PDF (70 kB)
Basic Principles of Postgrowth Annealing of CdTe:Cl Ingot to Obtain Semi-Insulating Crystals
O. A. Matveev and A. I. Terent'ev
pp. 1264-1269 Full Text: PDF (81 kB)
A Quasi-Linear Photorefractive Effect in Silicon
A. L. Filatov
pp. 1270-1274 Full Text: PDF (63 kB)
Fabrication and Photoelectronic Properties of ZnTe Single Crystals and Schottky Diodes
G. A. Il'chuk, V. I. Ivanov-Omskii, V. Yu. Rud', Yu. V. Rud', R. N. Bekimbetov, and N. A. Ukrainets
pp. 1275-1280 Full Text: PDF (84 kB)
Quasi-localized States and Resonance Scattering of Particles by Defects in Semiconductor Crystals with Band Spectrum Structure
S. E. Savotchenko
pp. 1281-1286 Full Text: PDF (76 kB)
Magneto-Optical Study of Bismuth at 80���280 K
V. M. Grabov, K. G. Ivanov, and A. A. Zaitsev
pp. 1287-1289 Full Text: PDF (52 kB)
Stimulation of Luminescence in Graded-Gap AlxGa1 ��� xAs Semiconductors
K. Pozela, R.-A. Bendorius, J. Pozela, and A. Silenas
pp. 1290-1294 Full Text: PDF (72 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photoelectric Properties of Isotype and Anisotype Si/GaN:O Heterojunctions
S. E. Aleksandrov, T. A. Gavrikova, and V. A. Zykov
pp. 1295-1300 Full Text: PDF (90 kB)
Nanorelief of a GaN Surface: the Effect of Sulfide Treatment
V. N. Bessolov, Yu. V. Zhilyaev, E. E. Zavarin, M. E. Kompan, E. V. Konenkova, A. S. Usikov, and V. A. Fedirko
pp. 1301-1304 Full Text: PDF (123 kB)
The Dislocation Origin and Model of Excess Tunnel Current in GaP p���n Structures
V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, N. Nazarov, A. A. Sitnikova, and L. M. Fedorov
pp. 1305-1310 Full Text: PDF (161 kB)
LOW-DIMENSIONAL SYSTEMS
Photoresistance of Si/Ge/Si Structures with Germanium Quantum Dots
O. A. Shegai, K. S. Zhuravlev, V. A. Markov, A. I. Nikiforov, and O. P. Pchelyakov
pp. 1311-1315 Full Text: PDF (80 kB)
The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3���1.4 ��m
B. V. Volovik, D. S. Sizov, A. F. Tsatsul'nikov, Yu. G. Musikhin, N. N. Ledentsov, V. M. Ustinov, V. A. Egorov, V. N. Petrov, N. K. Polyakov, and G. �. Tsyrlin
pp. 1316-1320 Full Text: PDF (133 kB)
A Nonlinear Theory of Coherent Oscillations in a Resonance-Tunnel Diode in a Wide Frequency Range
V. F. Elesin, I. Yu. Kateev, and A. I. Podlivaev
pp. 1321-1326 Full Text: PDF (75 kB)
Optical-Absorption Spectra of PbS/C-Based Fibonacci Superlattices with Phonon-Assisted Transitions
S. F. Musikhin, O. V. Rabizo, V. I. Il'in, A. S. Fedorov, and L. V. Sharonova
pp. 1327-1329 Full Text: PDF (38 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Electrical Properties of Hydrogenated Amorphous Ge0.90Si0.1:Hx Films
B. A. Nadzhafov
pp. 1330-1333 Full Text: PDF (61 kB)
Photoresponse and Electroluminescence of Silicon������ Structures
L. V. Belyakov, D. N. Goryachev, and O. M. Sreseli
pp. 1334-1337 Full Text: PDF (56 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Laser Waveguide with a Reverse Gradient of the Refractive Index
E. Yu. Kotel'nikov, I. V. Kudryashov, M. G. Rastegaeva, A. A. Katsnel'son, A. S. Shkol'nik, and V. P. Evtikhiev
pp. 1338-1340 Full Text: PDF (52 kB)
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes
E. Yu. Kotel'nikov, A. A. Katsnel'son, I. V. Kudryashov, M. G. Rastegaeva, W. Richter, V. P. Evtikhiev, I. S. Tarasov, and Zh. I. Alferov
pp. 1341-1342 Full Text: PDF (32 kB)
InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3���4 ��m: Part I
T. N. Danilova, A. N. Imenkov, V. V. Sherstnev, and Yu. P. Yakovlev
pp. 1343-1350 Full Text: PDF (110 kB)
A Coherent Laser Based on a Two-Well Structure
V. F. Elesin and A. V. Tsukanov
pp. 1351-1354 Full Text: PDF (55 kB) | en |
