| dc.description | Semiconductors -- April 2000
Volume 34, Issue 4, pp. 371-494
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamics of Complex Formation and Defect Clustering in Semiconductors
S. V. Bulyarskii, V. V. Svetukhin, and P. E. L'vov
pp. 371-375 Full Text: PDF (62 kB)
Highly Efficient n-(Bi, Sb)2Te3 Thermoelectric Materials for Temperatures Below 200 K
V. A. Kutasov, L. N. Luk'yanova, and P. P. Konstantinov
pp. 376-380 Full Text: PDF (88 kB)
Tunneling Spectroscopy of Impurity Atoms in a Single-Crystal Semiconductor Matrix
A. V. Kartavykh, N. S. Maslova, V. I. Panov, V. V. Rakov, and S. V. Savinov
pp. 381-385 Full Text: PDF (391 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Saturation of Interband Absorption in Semiconductors
A. O. Melikyan and G. R. Minasyan
pp. 386-388 Full Text: PDF (39 kB)
Scattering of Phonons by a Spatially Correlated System of Fe Atoms and the Low-Temperature Anomaly of Thermal Conductivity in HgSe:Fe Crystals
I. G. Kuleev, A. T. Lonchakov, and I. Yu. Arapova
pp. 389-397 Full Text: PDF (121 kB)
Activation-Controlled Conduction and Metal���Insulator Transition in the Impurity Band of Narrow-Gap p-Hg1 ��� xCdxTe Doped Crystals
V. V. Bogoboyashchii, S. G. Gasan-zade, and G. A. Shepel'skii
pp. 398-404 Full Text: PDF (103 kB)
Cathodoluminescence and Raman Scattering in Ga1 ��� xAlxP Epitaxial Films
L. K. Vodop'yanov, V. I. Kozlovskii, and N. N. Mel'nik
pp. 405-409 Full Text: PDF (95 kB)
Participation of the Electron Subsystem of a Crystal in the Reactions of Defect-Complex Decomposition in Semiconductors
N. I. Boyarkina
pp. 410-414 Full Text: PDF (66 kB)
Bandgap and Intrinsic Carrier Concentration in HgCdMnTe and HgCdZnTe
O. A. Bodnaruk, A. V. Markov, S. �. Ostapov, I. M. Rarenko, and A. F. Slonetskii
pp. 415-417 Full Text: PDF (46 kB)
Fission of Longitudinal Autosolitons in InSb in a Magnetic Field
I. K. Kamilov, A. A. Stepurenko, and A. S. Kovalev
pp. 418-421 Full Text: PDF (56 kB)
Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect
I. L. Drichko, A. M. D'yakonov, I. Yu. Smirnov, and A. I. Toropov
pp. 422-428 Full Text: PDF (97 kB)
Variation in the Defect Structure of p-CdTe Single Crystals at the Passage of the Laser Shock Wave
A. Baidullaeva, A. I. Vlasenko, B. L. Gorkovenko, A. V. Lomovtsev, and P. E. Mozol'
pp. 429-432 Full Text: PDF (51 kB)
Optical Spectra and Electronic Structure of Cubic Silicon Carbide
V. V. Sobolev and A. N. Shestakov
pp. 433-437 Full Text: PDF (64 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
On the Theory of Anomalous Photovoltage in Multilayer Structures with p���n Junctions
V. N. Agarev and N. A. Stepanova
pp. 438-440 Full Text: PDF (37 kB)
Equilibrium Distributions of Shallow-Level Impurity and Potential in the Near-Surface Region of a Semiconductor in a Model with a Completely Depleted Layer
V. V. Gavrilovets, V. B. Bondarenko, Yu. A. Kudinov, and V. V. Korablev
pp. 441-444 Full Text: PDF (57 kB)
LOW-DIMENSIONAL SYSTEMS
On the Static Conductivity of a Disordered Quantum System with the Mirror Symmetry
A. G. Moiseev
pp. 445-447 Full Text: PDF (40 kB)
A Numerical Calculation of Auger Recombination Coefficients for InGaAsP/InP Quantum Well Heterostructures
N. A. Gun'ko, A. S. Polkovnikov, and G. G. Zegrya
pp. 448-452 Full Text: PDF (66 kB)
Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
V. G. Talalaev, B. V. Novikov, S. Yu. Verbin, A. B. Novikov, Dinh Son Thath, I. V. Shchur, G. Gobsch, R. Goldhahn, N. Stein, A. Golombek, G. �. Tsyrlin, V. N. Petrov, V. M. Ustinov, A. E. Zhukov, and A. Yu. Egorov
pp. 453-461 Full Text: PDF (119 kB)
Charge Carrier Interference in Modulated Quantum Wires
N. T. Bagraev, W. Gehlhoff, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 462-472 Full Text: PDF (165 kB)
Dependence of the Energy Spectrum of a Strained ZnSe/ZnS Superlattice on the Charge-Carrier Concentration
R. M. Peleshchak and B. A. Lukiyanets
pp. 473-476 Full Text: PDF (60 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition
V. P. Afanas'ev, A. S. Gudovskikh, O. I. Kon'kov, M. M. Kazanin, K. V. Kougiya, A. P. Sazanov, I. N. Trapeznikova, and E. I. Terukov
pp. 477-480 Full Text: PDF (166 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots
I. L. Krestnikov, A. V. Sakharov, W. V. Lundin, Yu. G. Musikhin, A. P. Kartashova, A. S. Usikov, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, I. P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A. C. Plaut, A. A. Hoffmann, and D. Bimberg
pp. 481-487 Full Text: PDF (247 kB)
Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (lambda = 3.0���3.6 ��m)
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, T. Beyer, and R. Brunner
pp. 488-492 Full Text: PDF (87 kB)
IN MEMORIAM
Aleksandr Aleksandrovich Rogachev
pp. 493-494 Full Text: PDF (130 kB) | en |
