| dc.description | Semiconductors -- June 2000
Volume 34, Issue 6, pp. 615-740
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Investigation of the Influence of External Effects on the Behavior of Gold Impurity in Silicon
S. Z. Zainabidinov, O. O. Mamatkarimov, I. G. Tursunov, and U. A. Tuichiev
pp. 615-617 Full Text: PDF (42 kB)
Internal Friction Related to Changes in the Shape of Small Inclusions
Yu. N. Andreev, B. M. Darinskii, V. A. Moshnikov, D. S. Saiko, and N. P. Yaroslavtsev
pp. 618-620 Full Text: PDF (41 kB)
Specifics of MOCVD Formation of InxGa1 ��� xN Inclusions in a GaN Matrix
I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen
pp. 621-625 Full Text: PDF (200 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Interband Emission of Cadmium Thiogallate
A. I. Machuga, V. F. Zhitar', and E. D. Arama
pp. 626-628 Full Text: PDF (39 kB)
Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron
E. G. Tishkovskii, V. I. Obodnikov, A. A. Taskin, K. V. Feklistov, and V. G. Seryapin
pp. 629-633 Full Text: PDF (64 kB)
Multiphonon Capture of Charge Carriers by Deep-Level Centers in a Depletion Region of a Semiconductor
M. A. Dem'yanenko, V. N. Ovsyuk, and V. V. Shashkin
pp. 634-640 Full Text: PDF (97 kB)
Temperature Dependences of Electrical Properties of n-type PbSe Single-Crystalline Films Subjected to alpha-Particle Bombardment
Ya. P. Salii and R. Ya. Salii
pp. 641-643 Full Text: PDF (45 kB)
Charge Carrier Mobility in n-CdxHg1 ��� xTe Crystals Subjected to Dynamic Ultrasonic Stressing
A. I. Vlasenko, Ya. M. Olikh, and R. K. Savkina
pp. 644-649 Full Text: PDF (86 kB)
On the Origin of the Thermal���Field Asymmetry in Ionic Polarization/Depolarization of Oxide in Si-MOS Structures
E. I. Gol'dman, A. G. Zhdan, and G. V. Chucheva
pp. 650-654 Full Text: PDF (77 kB)
Equilibrium Energy Distribution of Localized Carriers in Disordered Semiconductors Subjected to an External Electric Field at Low Temperature
D. V. Nikolaenkov, V. I. Arkhipov, and V. R. Nikitenko
pp. 655-657 Full Text: PDF (40 kB)
Photoelectric Phenomena in a-Si:H/p-CuInSe2 Heterostructures
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 658-661 Full Text: PDF (63 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Thermoelectric and Photoelectric Properties of the p���n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method
M.-R. A. Magomedov, Sh. M. Ismailov, Dzh. Kh. Magomedova, and P. P. Khokhlachev
pp. 662-664 Full Text: PDF (50 kB)
Critical Voltage Growth Rate when Initiating the Ultrafast Impact Ionization Front in a Diode Structure
A. M. Minarskii and P. B. Rodin
pp. 665-667 Full Text: PDF (48 kB)
Special Features of Generation���Recombination Processes in the p���n Junctions Based on HgMnTe
L. A. Kosyachenko, S. �. Ostapov, and Sun Weiguo
pp. 668-670 Full Text: PDF (48 kB)
Influence of SiO2 Protective Films on the Diffusion of Atomic Hydrogen during the Hydrogenation of Epitaxial n-GaAs
A. V. Panin and N. A. Torkhov
pp. 671-676 Full Text: PDF (457 kB)
Photosensitivity of a-Si:H/n-InSe Heterocontacts
Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov
pp. 677-679 Full Text: PDF (54 kB)
Surface Magnetoplasma Waves in a Ferromagnetic Semiconductor and their Excitation by a Magnetic Dipole
V. L. Fal'ko, S. I. Khankina, and V. M. Yakovenko
pp. 680-685 Full Text: PDF (75 kB)
LOW-DIMENSIONAL SYSTEMS
Reflection Coefficient of a Semiconductor Superlattice Subjected to a Magnetic Field
A. A. Bulgakov and O. V. Shramkova
pp. 686-692 Full Text: PDF (96 kB)
Low-Temperature Photoluminescence and X-ray Diffractometry Study of InxGa1 ��� xAs Quantum Wells
S. V. Evstigneev, R. M. Imamov, A. A. Lomov, Yu. G. Sadof'ev, Yu. V. Khabarov, M. A. Chuev, and D. S. Shipitsin
pp. 693-699 Full Text: PDF (93 kB)
Self-Ordered Microcavities Embedded in Ultrashallow Silicon p���n Junctions
N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko, and S. A. Rykov
pp. 700-711 Full Text: PDF (652 kB)
Ballistic Conductance of a Quantum Wire at Finite Temperatures
N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, and I. A. Shelykh
pp. 712-716 Full Text: PDF (65 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Kinetics of Light-Induced Degradation in a-Si:H Films Investigated by Computer Simulation
M. N. Meytin, M. Zeman, B. G. Budaguan, and J. W. Metselaar
pp. 717-722 Full Text: PDF (92 kB)
The Staebler���Wronski Effect and Temperature Dependences of Photoconductivity in p-type a-Si:H
S. V. Kuznetsov
pp. 723-727 Full Text: PDF (83 kB)
Modification of Optoelectronic Properties of Porous Silicon Produced in an Electrolyte Based on Heavy Water
B. V. Kamenev, E. A. Konstantinova, P. K. Kashkarov, and V. Yu. Timoshenko
pp. 728-731 Full Text: PDF (231 kB)
Optical and Electrical Properties of Porous Gallium Arsenide
N. S. Averkiev, L. P. Kazakova, �. A. Lebedev, Yu. V. Rud', A. N. Smirnov, and N. N. Smirnova
pp. 732-736 Full Text: PDF (79 kB)
Effect of Nanocrystalline Inclusions on the Photosensitivity of Amorphous Hydrogenated Silicon Films
O. A. Golikova and M. M. Kazanin
pp. 737-740 Full Text: PDF (60 kB) | en |
