| dc.description | Semiconductors -- January 2001
Volume 35, Issue 1, pp. 1-123
REVIEWS
Magnetotransistors
I. M. Vikulin, L. F. Vikulina, and V. I. Stafeev
pp. 1-9 Full Text: PDF (107 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Kinetics of Production of Oxygen-Containing Quenched-in Donors in Silicon and Their Nonuniform Distribution: An Analytical Solution
P. A. Selishchev
pp. 10-13 Full Text: PDF (50 kB)
M�_ssbauer-Effect Study of Off-Center Atoms in IV���VI Semiconductors
J. Bland, M. F. Thomas, V. A. Virchenko, V. S. Kuz[prime]min, and T. M. Tkachenko
pp. 14-19 Full Text: PDF (82 kB)
A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation
E. S. Demidov, V. V. Karzanov, D. A. Lobanov, K. A. Markov, and V. V. Sdobnyakov
pp. 20-23 Full Text: PDF (109 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, and E. M. Gavrishchuk
pp. 24-32 Full Text: PDF (113 kB)
The Concentration Dependence of Acceptor-State Radii in p-Hg0.78Cd0.22Te Crystals
V. V. Bogoboyashchii
pp. 33-39 Full Text: PDF (101 kB)
Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length in Semiconductor-Grade Silicon Ingots
V. D. Akhmetov and N. V. Fateev
pp. 40-47 Full Text: PDF (138 kB)
Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy
E. N. Agafonov, U. A. Aminov, A. N. Georgobiani, and L. S. Lepnev
pp. 48-53 Full Text: PDF (80 kB)
Effect of the Charge-Carrier Drift in a Built-in Quasi-Electric Field on the Emission Spectrum of the Graded-Gap Semiconductors
A. I. Bazyk, V. F. Kovalenko, A. Yu. Mironchenko, and S. V. Shutov
pp. 54-58 Full Text: PDF (71 kB)
The Electronic Spectrum and Electrical Properties of Germanium with a Doubly Charged Gold Impurity on Both Sides of the L1 [arrow-right-and-left] Delta1 Intervalley Transition for Uniform Pressures of up to 7 GPa
M. I. Daunov, I. K. Kamilov, and S. F. Gabibov
pp. 59-66 Full Text: PDF (108 kB)
Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs
N. N. Ageeva, I. L. Bronevoi, and A. N. Krivonosov
pp. 67-71 Full Text: PDF (75 kB)
On the Physical Nature of a Photomechanical Effect
A. B. Gerasimov, G. D. Chiradze, and N. G. Kutivadze
pp. 72-76 Full Text: PDF (73 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Excess Tunneling Currents in p-Si���n-3C-SiC Heterostructures
S. Zh. Karazhanov, I. G. Atabaev, T. M. Saliev, �. V. Kanaki, and E. Dzhaksimov
pp. 77-79 Full Text: PDF (42 kB)
Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal���Insulator���p-GaAs Structures
A. V. Panin, A. R. Shugurov, and V. M. Kalygina
pp. 80-85 Full Text: PDF (317 kB)
LOW-DIMENSIONAL SYSTEMS
Deep Levels Related to Gallium Atom Clusters in GaAs
S. N. Grinyaev and V. A. Chaldyshev
pp. 86-90 Full Text: PDF (73 kB)
Vibrational Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe Superlattices in Terms of the Keating Model
E. N. Prykina, Yu. I. Polygalov, and A. V. Kopytov
pp. 91-92 Full Text: PDF (35 kB)
Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition
B. N. Zvonkov, I. A. Karpovich, N. V. Baidus', D. O. Filatov, and S. V. Morozov
pp. 93-98 Full Text: PDF (286 kB)
Persistent Photoeffects in p���i���n GaAs/AlGaAs Heterostructures with Double Quantum Wells
S. I. Dorozhkin, V. B. Timofeev, and J. Hvam
pp. 99-105 Full Text: PDF (108 kB)
Resonance Tunneling of X-Electrons in AlAs/GaAs(111) Structures: Pseudopotential Calculations and Models
G. F. Karavaev and V. N. Chernyshov
pp. 106-111 Full Text: PDF (72 kB)
Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF2 Structures with Participation of Traps
Yu. A. Berashevich, A. L. Danilyuk, A. N. Kholod, and V. E. Borisenko
pp. 112-116 Full Text: PDF (70 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
An Avalanche Photodiode with Metal���Insulator���Semiconductor Properties
Z. Ya. Sadygov, T. M. Burbaev, and V. A. Kurbatov
pp. 117-121 Full Text: PDF (72 kB)
PERSONALIA
Vladimir Mikhailovich Arutyunyan (dedicated to his 60th birthday)
pp. 122-123 Full Text: PDF (105 kB) | en |
