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Semiconductors V. 35, I. 03

dc.contributor.editorEditor of work here.en_US
dc.contributor.otherPreservation Department, Stony Brook University Libraries.en_US
dc.contributor.otherCataloging & Metadata Department, Stony Brook University Libraries.en_US
dc.date.accessioned2007-06-11T19:59:08Z
dc.date.accessioned2015-04-24T14:42:25Z
dc.date.available2007-06-11T19:59:08Z
dc.date.available2015-04-24T14:42:25Z
dc.date.issued2001-03en_US
dc.identifier.urihttp://hdl.handle.net/1951/41424
dc.identifier.urihttp://hdl.handle.net/11401/70198
dc.descriptionleave(s) : ill; 28 cm.en_US
dc.descriptionSemiconductors -- March 2001 Volume 35, Issue 3, pp. 243-369 REVIEWS Electrical and Optical Properties of Pristine and Polymerized Fullerenes T. L. Makarova pp. 243-278 Full Text: PDF (791 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Heteroepitaxy of II���VI Compound Semiconductors on Cooled Substrates A. P. Belyaev and V. P. Rubets pp. 279-282 Full Text: PDF (107 kB) Molecular-Dynamics Simulation of Structural Properties of Ge1 ��� xSnx Substitutional Solid Solutions V. G. Deibuk and Yu. G. Korolyuk pp. 283-286 Full Text: PDF (60 kB) Low-Temperature Diffusion of Indium into Germanium Assisted by Atomic Hydrogen V. M. Matyushin pp. 287-290 Full Text: PDF (51 kB) A New Magnetic Semiconductor Cd1 ��� xMnxGeP2 G. A. Medvedkin, T. Ishibashi, T. Nishi, and K. Sato pp. 291-294 Full Text: PDF (133 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Temperature Dependence of a Magnetoresistance Effect in the Films of Ferromagnetic Semiconductors Based on Oxides of Rare-Earth Elements V. F. Kabanov, S. A. Karasev, and Ya. G. Fedorenko pp. 295-297 Full Text: PDF (44 kB) Specific Features of the Nonequilibrium Distribution Function for Electron Scattering by Polar Optical Phonons in III���V Semiconductors S. I. Borisenko pp. 298-301 Full Text: PDF (60 kB) On the Stabilization of Electrical Properties of Compensated Silicon as a Result of Irradiation with 60Co Gamma-Ray Quanta M. S. Yunusov, M. Karimov, and M. A. Dzhalelov pp. 302-305 Full Text: PDF (54 kB) Generation���Recombination Processes in Semiconductors I. N. Volovichev and Yu. G. Gurevich pp. 306-315 Full Text: PDF (99 kB) Capacitance���Voltage Characteristics of p���n Structures Based on (111)Si Doped with Erbium and Oxygen A. M. Emel'yanov, N. A. Sobolev, and A. N. Yakimenko pp. 316-320 Full Text: PDF (75 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Negative Luminescence in p-InAsSbP/n-InAs Diodes M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and G. N. Talalakin pp. 321-324 Full Text: PDF (78 kB) Characterization of Electroluminescent Structures Based on Gallium Arsenide Ion-Implanted with Ytterbium and Oxygen D. W. Palmer, V. A. Dravin, V. M. Konnov, E. A. Bobrova, N. N. Loiko, S. G. Chernook, and A. A. Gippius pp. 325-330 Full Text: PDF (73 kB) Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties T. I. Voronina, B. E. Zhurtanov, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rozov, and Yu. P. Yakovlev pp. 331-337 Full Text: PDF (102 kB) Extension of the Frequency Range of the Noise Spectral Density in Silicon p���n Structures Irradiated with Gamma-Ray Quanta O. K. Baranovskii, P. V. Kuchinskii, V. M. Lutkovskii, A. P. Petrunin, and E. D. Savenok pp. 338-342 Full Text: PDF (75 kB) LOW-DIMENSIONAL SYSTEMS Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing L. V. Asryan and R. A. Suris pp. 343-346 Full Text: PDF (61 kB) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs I. P. Soshnikov, O. M. Gorbenko, A. O. Golubok, and N. N. Ledentsov pp. 347-352 Full Text: PDF (615 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical and Photoelectric Properties of a-Si:H Layered Films: The Influence of Thermal Annealing I. A. Kurova, N. N. Ormont, E. I. Terukov, I. N. Trapeznikova, V. P. Afanas'ev, and A. S. Gudovskikh pp. 353-356 Full Text: PDF (68 kB) PHYSICS OF SEMICONDUCTOR DEVICES Optically Pumped Mid-Infrared InGaAs(Sb) LEDs N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', G. N. Talalakin, and V. V. Shustov pp. 357-359 Full Text: PDF (56 kB) Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 ��m A. N. Imenkov, N. M. Kolchanova, P. Kubat, K. D. Moiseev, C. Civis, and Yu. P. Yakovlev pp. 360-364 Full Text: PDF (63 kB) Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers D. A. Livshits, A. Yu. Egorov, I. V. Kochnev[dagger], V. A. Kapitonov, V. M. Lantratov, N. N. Ledentsov, T. A. Nalyot, and I. S. Tarasov pp. 365-369 Full Text: PDF (66 kB)en
dc.formatMonograph.en_US
dc.format.extent2533498 bytes
dc.format.extent6882 bytes
dc.format.mediumElectronic Resource.en_US
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherStony Brook University.en_US
dc.relation.ispartofseriesV. 35en
dc.relation.ispartofseriesI. 03en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 35, I. 03en
dc.typeOther.en_US
dc.description.contributorThe content contained herein is maintained and curated by the Preservation Department.en_US
dc.description.contributorThis record is revised and maintained by the content administrators from the Cataloging & Metadata Department.en_US
dc.publisher.locationStony Brook, NY.en_US


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