| dc.description | Semiconductors -- May 2003
Volume 37, Issue 5, pp. 493-615
REVIEW
Artificial GeSi Substrates for Heteroepitaxy: Achievements and Problems
Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, and S. I. Chikichev
pp. 493-518 Full Text: PDF (384 kB)
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Propagation of Nonequilibrium Phonons in Single-Crystal ZnTe
T. I. Galkina, A. Yu. Klokov, A. I. Sharkov, Yu. V. Korostelin, and V. V. Zaitsev
pp. 519-522 Full Text: PDF (60 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Magnetooptical Oscillations in Bismuth at T => 77 K
O. V. Kondakov and K. G. Ivanov
pp. 523-525 Full Text: PDF (47 kB)
A Local Specific Feature of Variation in the Spectrum of Picosecond Superluminescence upon Adding Excited Carriers to a Non-Fermi Electron���Hole Plasma in GaAs
N. N. Ageeva, I. L. Bronevoi, A. N. Krivonosov, S. E. Kumekov, and S. V. Stegantsov
pp. 526-531 Full Text: PDF (76 kB)
Phonon-Assisted Exciton Luminescence in GaN Layers Grown by MBE and Chloride-Hydride VPE
M. G. Tkachman, T. V. Shubina, V. N. Jmerik, S. V. Ivanov, P. S. Kop'ev, T. Paskova, and B. Monemar
pp. 532-536 Full Text: PDF (72 kB)
Electronic Properties of Irradiated Semiconductors. A Model of the Fermi Level Pinning
V. N. Brudnyi, S. N. Grinyaev, and N. G. Kolin
pp. 537-545 Full Text: PDF (120 kB)
Relaxation of a Defect Subsystem in Silicon Irradiated with High-Energy Heavy Ions
S. A. Smagulova, I. V. Antonova, E. P. Neustroev, and V. A. Skuratov
pp. 546-550 Full Text: PDF (68 kB)
Diffusion of Europium in Silicon
D. �. Nazyrov
pp. 551-552 Full Text: PDF (28 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Photosensitive Structures Based on CdGa2Se4 Single Crystals
A. A. Vaipolin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, and N. Fernelius
pp. 553-558 Full Text: PDF (87 kB)
LOW-DIMENSIONAL SYSTEMS
Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
D. S. Sizov, Yu. B. Samsonenko, G. E. Tsyrlin, N. K. Polyakov, V. A. Egorov, A. A. Tonkikh, A. E. Zhukov, S. S. Mikhrin, A. P. Vasil'ev, Yu. G. Musikhin, A. F. Tsatsul'nikov, V. M. Ustinov, and N. N. Ledentsov
pp. 559-563 Full Text: PDF (105 kB)
Model of Multi-Island Single-Electron Arrays Based on the Monte Carlo Method
I. I. Abramov, S. A. Ignatenko, and E. G. Novik
pp. 564-568 Full Text: PDF (63 kB)
Dispersion of the Relaxation Time of Quasi-Two-Dimensional Electrons under Conditions of Ionized-Impurity Scattering in a Superlattice with Doped Quantum Wells
S. I. Borisenko
pp. 569-572 Full Text: PDF (57 kB)
Electronic and Optical Properties of AlAs/AlxGa1 ��� xAs(110) Superlattices
G. F. Karavaev, V. N. Chernyshov, and R. M. Egunov
pp. 573-580 Full Text: PDF (93 kB)
Photoluminescence Study of AlGaAs/GaAs/AlGaAs Double Quantum Wells Separated by a Thin AlAs Layer
G. B. Galiev, M. V. Karachevtseva, V. G. Mokerov, V. A. Strakhov, G. N. Shkerdin, and N. G. Yaremenko
pp. 581-585 Full Text: PDF (69 kB)
Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells
L. E. Vorob'ev, S. N. Danilov, V. L. Zerova, and D. A. Firsov
pp. 586-593 Full Text: PDF (101 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Semi-Insulating Silicon Carbide Layers Obtained by Diffusion of Vanadium into Porous 4H-SiC
M. G. Mynbaeva, A. A. Lavrent'ev, N. I. Kuznetsov, A. N. Kuznetsov, K. D. Mynbaev, and A. A. Lebedev
pp. 594-597 Full Text: PDF (48 kB)
Quantum-Chemical Simulation of the Influence of Defects on the Infrared Spectrum and the Electronic Structure of a-Se
A. S. Zyubin, F. V. Grigor'ev, and S. A. Dembovskii
pp. 598-603 Full Text: PDF (75 kB)
Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses
G. D. Ivlev and E. I. Gatskevich
pp. 604-610 Full Text: PDF (119 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Detection of Hydrogen Impurity in Silicon Radiation Detectors
L. F. Makarenko, F. P. Korshunov, S. B. Lastovskii, and N. I. Zamyatin
pp. 611-615 Full Text: PDF (66 kB) | en |
