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Semiconductors V. 39, I. 02

dc.contributor.editorEditor of work here.en_US
dc.contributor.otherPreservation Department, Stony Brook University Libraries.en_US
dc.contributor.otherCataloging & Metadata Department, Stony Brook University Libraries.en_US
dc.date.accessioned2007-06-12T19:54:11Z
dc.date.accessioned2015-04-24T14:42:39Z
dc.date.available2007-06-12T19:54:11Z
dc.date.available2015-04-24T14:42:39Z
dc.date.issued2005-02en_US
dc.identifier.urihttp://hdl.handle.net/1951/41472
dc.identifier.urihttp://hdl.handle.net/11401/70262
dc.descriptionleave(s) : ill; 28 cm.en_US
dc.descriptionSemiconductors -- February 2005 Volume 39, Issue 2, pp. 161-272 ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Ab initio Studies of the Band Parameters of III���V and II���VI Zinc-Blende Semiconductors S. Zh. Karazhanov and L. C. Lew Yan Voon pp. 161-173 Full Text: PDF (158 kB) Photoreflection Studies of the Dopant Activation in InP Implanted with Be+ Ions L. P. Avakyants, P. Yu. Bokov, and A. V. Chervyakov pp. 174-176 Full Text: PDF (52 kB) The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si V. A. Gridchin and V. M. Lubimskii pp. 177-181 Full Text: PDF (68 kB) Spectroscopic Study of Ga-Doped Ge under Uniaxial Pressure Ya. E. Pokrovskii and N. A. Khval'kovskii pp. 182-188 Full Text: PDF (105 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES The Effect of Laser Radiation on the Formation of Oriented Cadmium Sulfide Layers under Highly Nonequilibrium Conditions A. P. Belyaev, V. P. Rubets, and V. V. Antipov pp. 189-191 Full Text: PDF (100 kB) Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon V. A. Gridchin, V. M. Lyubimskii, and A. G. Moiseev pp. 192-197 Full Text: PDF (82 kB) The Influence of a Nonlinear Electromagnetic Wave on Electric Current Density in a Surface Superlattice in a Strong Electric Field D. V. Zav'yalov, S. V. Kryuchkov, and N. E. Meshcheryakova pp. 198-201 Full Text: PDF (57 kB) Fabrication and Photoelectric Properties of the ZnO���Cu(In,Ga)Se2 Heterojunctions V. F. Gremenok, G. A. Il'chuk, S. E. Nikitin, V. Yu. Rud', and Yu. V. Rud' pp. 202-205 Full Text: PDF (57 kB) The Qualitative Difference between Mechanisms of Electroforming in Si���SiO2���W Structures Based on n-Si and p-Si V. M. Mordvintsev, S. E. Kudryavtsev, and V. L. Levin pp. 206-213 Full Text: PDF (104 kB) Luminescence of Multilayer Structures Based on InAsSb at lambda = 6���9 ��m N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus', and N. G. Tarakanova pp. 214-217 Full Text: PDF (91 kB) Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures G. A. Il'chuk, S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 218-220 Full Text: PDF (48 kB) LOW-DIMENSIONAL SYSTEMS Nonohmic Conductance and Mechanisms of Energy Relaxation in 2D Electron Gas in GaAs/InGaAs/GaAs Heterostructures A. A. Sherstobitov, G. M. Min'kov, O. E. Rut, A. V. Germanenko, and B. N. Zvonkov pp. 221-225 Full Text: PDF (77 kB) Special Features of the Electron���Electron Interaction in the Potential of a Heavily Doped AlxGa1 ��� xAs:Si/GaAs Heterojunction V. I. Kadushkin pp. 226-230 Full Text: PDF (71 kB) The Effect of Thickness Fluctuations on the Static Electrical Conductivity of a Semiconductor Quantum Wire M. A. Ruvinskii and B. M. Ruvinskii pp. 231-234 Full Text: PDF (59 kB) Selective Electron Transfer between Quantum Dots Induced by a Resonance Pulse L. A. Openov and A. V. Tsukanov pp. 235-242 Full Text: PDF (92 kB) Optical Properties of Porous Nanosized GaAs A. I. Belogorokhov, S. A. Gavrilov, I. A. Belogorokhov, and A. A. Tikhomirov pp. 243-248 Full Text: PDF (109 kB) Kinetics and Inhomogeneous Carrier Injection in InGaN Nanolayers D. S. Sizov, V. S. Sizov, E. E. Zavarin, V. V. Lundin, A. V. Fomin, A. F. Tsatsul'nikov, and N. N. Ledentsov pp. 249-253 Full Text: PDF (69 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical Characteristics of Insulator���Conductor and Insulator���Semiconductor Macrosystems V. A. Sotskov pp. 254-260 Full Text: PDF (90 kB) On the Injection Current Mechanism in Light-Emitting p���i���n Structures Based on a-Si1 ��� xCx:H Hydrogenated Amorphous Alloys A. A. Andreev pp. 261-264 Full Text: PDF (59 kB) PHYSICS OF SEMICONDUCTOR DEVICES A Graded-Gap Photoelectric Detector for Ionizing Radiation L. Dapkus, K. Pozela, J. Pozela, A. Silenas, V. Juciene, and V. Jasutis pp. 265-268 Full Text: PDF (65 kB) Ammonia Sensors Based on Pd���n-Si Diodes V. I. Balyuba, V. Yu. Grisyk, T. A. Davydova, V. M. Kalygina, S. S. Nazarov, and L. S. Khludkova pp. 269-272 Full Text: PDF (61 kB)en
dc.formatMonograph.en_US
dc.format.extent1472458 bytes
dc.format.extent6706 bytes
dc.format.mediumElectronic Resource.en_US
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/html
dc.language.isoen_USen
dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherStony Brook University.en_US
dc.relation.ispartofseriesV. 39en
dc.relation.ispartofseriesI. 02en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.subjectSemiconductorsen
dc.subject.lcshPhysicsen
dc.titleSemiconductors V. 39, I. 02en
dc.typeOther.en_US
dc.description.contributorThe content contained herein is maintained and curated by the Preservation Department.en_US
dc.description.contributorThis record is revised and maintained by the content administrators from the Cataloging & Metadata Department.en_US
dc.publisher.locationStony Brook, NY.en_US


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