| dc.description | Semiconductors -- December 2003
Volume 37, Issue 12, pp. 1363-1430
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Redistribution of Ytterbium and Oxygen in Annealing of Silicon Layers Amorphized by Implantation
O. V. Aleksandrov, Yu. A. Nikolaev, N. A. Sobolev, R. Asomoza, Yu. Kudriavtsev, A. Villegas, and A. Godines
pp. 1363-1366 Full Text: PDF (69 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Two-Electron Tin Centers Formed in Lead Chalcogenides as a Result of Nuclear Transmutations
S. A. Nemov, P. P. Seregin, Yu. V. Kozhanova, and N. P. Seregin
pp. 1367-1372 Full Text: PDF (102 kB)
Specific Features of Conductivity of Cd1 ��� xZnxTe and Cd1 ��� xMnxTe Single Crystals
L. A. Kosyachenko, A. V. Markov, E. L. Maslyanchuk, I. M. Rarenko, and V. M. Sklyarchuk
pp. 1373-1379 Full Text: PDF (114 kB)
Photoluminescence at 1.5 ��m from Single-Crystal Silicon Layers Subjected to Mechanical Treatment
R. I. Batalov, R. M. Bayazitov, B. A. Andreev, D. I. Kryzhkov, E. I. Terukov, and V. Kh. Kudoyarova
pp. 1380-1382 Full Text: PDF (47 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Investigation of the ZnS���CdHgTe Interface
P. V. Biryulin, S. A. Dudko, S. A. Konovalov, Yu. A. Pelevin, and V. I. Turinov
pp. 1383-1386 Full Text: PDF (66 kB)
Mechanisms of Photocurrent Generation in In2O3���InSe Heterojunctions
V. P. Makhniy and O. I. Yanchuk
pp. 1387-1389 Full Text: PDF (41 kB)
LOW-DIMENSIONAL SYSTEMS
Spin Depolarization in Spontaneously Polarized Low-Dimensional Systems
I. A. Shelykh, N. T. Bagraev, and L. E. Klyachkin
pp. 1390-1399 Full Text: PDF (121 kB)
Fabrication and Optical Properties of Photonic Crystals Based on Opal���GaP and Opal���GaPN Composites
G. M. Gadzhiev, V. G. Golubev, M. V. Zamoryanskaya, D. A. Kurdyukov, A. V. Medvedev, J. Merz, A. Mintairov, A. B. Pevtsov, A. V. Sel'kin, V. V. Travnikov, and N. V. Sharenkova
pp. 1400-1405 Full Text: PDF (81 kB)
Room-Temperature 1.5���1.6 ��m Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
A. A. Tonkikh, G. E. Tsyrlin, V. G. Talalaev, B. V. Novikov, V. A. Egorov, N. K. Polyakov, Yu. B. Samsonenko, V. M. Ustinov, N. D. Zakharov, and P. Werner
pp. 1406-1410 Full Text: PDF (182 kB)
Lasing at 1.5 ��m in Quantum Dot Structures on GaAs Substrates
A. E. Zhukov, A. P. Vasil'yev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, A. Yu. Egorov, V. A. Odnoblyudov, N. A. Maleev, E. V. Nikitina, N. V. Kryjanovskaya, A. G. Gladyshev, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov
pp. 1411-1413 Full Text: PDF (63 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Properties of GaSb-Based Light-Emitting Diodes with Chemically Cut Substrates
E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova, A. V. Chernyaev, N. V. Vlasenko, and Yu. P. Yakovlev
pp. 1414-1420 Full Text: PDF (88 kB)
MOCVD GaInAsP/GaInP/AlGaInP Laser Structures Emitting at 780 nm
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. Yu. Leshko, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, N. V. Fetisova, V. V. Shamakhov, and I. S. Tarasov
pp. 1421-1424 Full Text: PDF (53 kB)
Picosecond High-Voltage Drift Diodes Based on Gallium Arsenide
A. V. Rozhkov and V. A. Kozlov
pp. 1425-1427 Full Text: PDF (83 kB)
Impact-Ionization Wave Breakdown and Generation of Picosecond Pulses in the Ultrahigh-Frequency Band in GaAs Drift Step-Recovery Diodes
V. A. Kozlov, A. V. Rozhkov, and A. F. Kardo-Sysoev
pp. 1428-1429 Full Text: PDF (125 kB)
PERSONALIA
Vladimir Idelevich Perel' (On His 75th Birthday)
p. 1430 Full Text: PDF (74 kB) | en |
