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Semiconductors V. 38, I. 02

dc.contributor.editordc.contributor.editor[en_US]en_US
dc.contributor.otherdc.contributor.other[en_US]en_US
dc.date.accessioned2007-06-12T19:31:51Z
dc.date.accessioned2015-04-24T14:42:43Z
dc.date.available2007-06-12T19:31:51Z
dc.date.available2015-04-24T14:42:43Z
dc.date.issued2004-02en_US
dc.identifier.urihttp://hdl.handle.net/1951/41460
dc.identifier.urihttp://hdl.handle.net/11401/70279
dc.descriptiondc.description[en_US]en_US
dc.descriptionSemiconductors -- February 2004 Volume 38, Issue 2, pp. 125-244 REVIEW Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films A. A. Lebedev, A. M. Ivanov, and N. B. Strokan pp. 125-147 Full Text: PDF (255 kB) ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS Molecular-Beam Epitaxy Doping of Gallium Nitride with Magnesium from Ammonia A. A. Vorob'ev, V. V. Korablev, and S. Yu. Karpov pp. 148-149 Full Text: PDF (33 kB) A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum S. Yu. Davydov, A. A. Lebedev, N. S. Savkina, M. Syvajarvi, and R. Yakimova pp. 150-152 Full Text: PDF (39 kB) Adsorption of Solvated Hydrosulfide Ions at a GaAs(100) Surface: The Role of a Solvent in Surface Structure Modification M. V. Lebedev, Th. Mayer, and W. Jaegermann pp. 153-160 Full Text: PDF (130 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Current���Voltage Characteristics of MnIn2S4 and MnGa2S4 Single Crystals N. N. Niftiev and O. B. Tagiev pp. 161-162 Full Text: PDF (33 kB) Electrical Properties of MnIn2S4 Single Crystals N. N. Niftiev pp. 163-164 Full Text: PDF (38 kB) Photosensitive Structures Based on the Compound AgIn11S17 I. V. Bodnar', V. Yu. Rud', and Yu. V. Rud' pp. 165-168 Full Text: PDF (58 kB) Magnetic Properties of Germanium-Doped Cadmium Telluride Yu. V. Shaldin, I. Warchulska, and Yu. M. Ivanov pp. 169-174 Full Text: PDF (107 kB) Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films V. A. Gridchin and V. M. Lubimsky pp. 175-181 Full Text: PDF (82 kB) Impurity States of Tin in Bi2Te3 ��� xSex (x = 0.06, 0.12) Solid Solutions M. K. Zhitinskaya, S. A. Nemov, T. E. Svechnikova, and E. M�_ller pp. 182-184 Full Text: PDF (61 kB) Observation of the Bose Condensation of Cooper Pairs in (Pb1 ��� xSnx)1 ��� zInzTe Semiconductor Solid Solutions S. A. Nemov, P. P. Seregin, V. P. Volkov, N. P. Seregin, and D. V. Shamshur pp. 185-188 Full Text: PDF (52 kB) Substitutional 3d Impurities in Cubic Silicon Carbide I. I. Parfenova pp. 189-191 Full Text: PDF (39 kB) The Nature of Low-Temperature Hysteresis of Hopping Magnetoresistance in Compensated Ge:Ga in the Vicinity of the Metal���Insulator Transition S. V. Egorov, A. G. Zabrodskii, and R. V. Parfen'ev pp. 192-196 Full Text: PDF (75 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Structures Based on Cu(Ag)InnSm Semiconductor Compounds I. V. Bodnar', V. A. Polubok, V. Yu. Rud', Yu. V. Rud', and M. S. Serginov pp. 197-201 Full Text: PDF (78 kB) LOW-DIMENSIONAL SYSTEMS Phonon Scattering of Quasi-Two-Dimensional Electrons in GaAs/AlxGa1 ��� xAs Superlattices S. I. Borisenko pp. 202-208 Full Text: PDF (81 kB) Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots T. V. Bezyazychnaya, V. M. Zelenkovskii, G. I. Ryabtsev, and M. M. Sobolev pp. 209-212 Full Text: PDF (63 kB) Normal-Incidence Responsivity of MOCVD-Grown Multiple Quantum Well Structures V. B. Kulikov, G. H. Avetisyan, L. M. Vasilevskaya, I. D. Zalevskii, I. V. Budkin, and A. A. Padalitsa pp. 213-216 Full Text: PDF (60 kB) Energy Structure of A+ Centers in Quantum Wells N. S. Averkiev, A. E. Zhukov, Yu. L. Ivanov, P. V. Petrov, K. S. Romanov, A. A. Tonkikh, V. M. Ustinov, and G. E. Tsyrlin pp. 217-220 Full Text: PDF (57 kB) TEM Study of the Formation and Modification of Nanocrystalline Si Inclusions in a-Si:H Films V. P. Afanasiev, A. S. Gudovskikh, A. Z. Kazak-Kazakevich, A. P. Sazanov, I. N. Trapeznikova, and E. I. Terukov pp. 221-224 Full Text: PDF (174 kB) Spectroscopy of Excitonic Polaritons in Strained II���VI Semiconductor Structures with Wide Quantum Wells S. A. Markov, R. P. Seisyan, and V. A. Kosobukin pp. 225-231 Full Text: PDF (100 kB) PHYSICS OF SEMICONDUCTOR DEVICES Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel V. A. Gergel', Yu. V. Gulyaev, A. P. Zelenyi, and M. N. Yakupov pp. 232-236 Full Text: PDF (72 kB) Experimental Study of SiC p���i���n Diodes in the 3-cm Range K. V. Vasilevskii, P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov pp. 237-238 Full Text: PDF (39 kB) Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers A. A. Afonenko, V. Ya. Aleshkin, and A. A. Dubinov pp. 239-242 Full Text: PDF (56 kB) PERSONALIA Vitalii Ivanovich Stafeev (on his 75th birthday) pp. 243-244 Full Text: PDF (22 kB)en
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dc.publisherMAIK ���Nauka/Interperiodica��.en
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dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 02en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
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dc.subjectSemiconductorsen
dc.subject.lcshdc.subject.lcsh[en_US]en_US
dc.subject.lcshPhysicsen
dc.subject.otherdc.subject.other[en_US]en_US
dc.titleSemiconductors V. 38, I. 02en
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