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dc.date.accessioned2007-06-12T19:34:49Z
dc.date.accessioned2015-04-24T14:42:44Z
dc.date.available2007-06-12T19:34:49Z
dc.date.available2015-04-24T14:42:44Z
dc.date.issued2004-04en_US
dc.identifier.urihttp://hdl.handle.net/1951/41462
dc.identifier.urihttp://hdl.handle.net/11401/70285
dc.descriptiondc.description[en_US]en_US
dc.descriptionSemiconductors -- April 2004 Volume 38, Issue 4, pp. 369-493 ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS A Theory of the Effect of Impurities on the Yield Stress of Silicon Crystals B. V. Petukhov pp. 369-375 Full Text: PDF (84 kB) Electric Transport in Gallium Antimonide Single Crystals Involving Molten GaSb���Sn Inclusions A. M. Orlov, A. A. Skvortsov, and A. A. Salanov pp. 376-379 Full Text: PDF (61 kB) ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS Microwave Photoconductivity and Photodielectric Effect in Thin PbS Films Obtained from Thiocarbamide Coordination Compounds N. L. Sermakasheva, G. F. Novikov, Yu. M. Shul'ga, and V. N. Semenov pp. 380-386 Full Text: PDF (83 kB) Capacitance Study of Electron Traps in Low-Temperature-Grown GaAs P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin pp. 387-392 Full Text: PDF (102 kB) SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES Oscillations of Induced Photopleochroism in ZnO/GaAs Heterojunctions S. E. Nikitin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', E. I. Terukov, N. Fernelius, and J. Goldstein pp. 393-396 Full Text: PDF (65 kB) Electron���Phonon Damping Factor for the Landau Quantization of 2D Electrons with a Fine Structure of the Energy Spectrum V. I. Kadushkin pp. 397-401 Full Text: PDF (73 kB) Oxide���p-InSe Heterostructures with Improved Photoelectric Characteristics V. N. Katerinchuk and Z. D. Kovalyuk pp. 402-405 Full Text: PDF (65 kB) Photosensitivity of the Structures Based on Quinary Solid Solutions of the Isoelectronic Series of Germanium A. A. Vaipolin, Yu. A. Nikolaev, V. Yu. Rud', Yu. V. Rud', and E. I. Terukov pp. 406-409 Full Text: PDF (63 kB) LOW-DIMENSIONAL SYSTEMS Energy States in Short-Period Symmetrical and Asymmetrical (GaAs)N/(AlAs)M Superlattices: The Effect of the Boundary Conditions K. E. Glukhov, A. I. Bercha, D. V. Korbutyak, and V. G. Litovchenko pp. 410-418 Full Text: PDF (113 kB) Resonant Gamma���X Tunneling in Single-Barrier GaAs/AlAs/GaAs Heterostructures Yu. N. Khanin, E. E. Vdovin, and Yu. V. Dubrovskii pp. 419-430 Full Text: PDF (178 kB) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer I. A. Karpovich, B. N. Zvonkov, S. B. Levichev, N. V. Baidus, S. V. Tikhov, D. O. Filatov, A. P. Gorshkov, and S. Yu. Ermakov pp. 431-436 Full Text: PDF (91 kB) Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells Yu. V. Khabarov, V. V. Kapaev, and V. A. Petrov pp. 437-446 Full Text: PDF (121 kB) A Model of Photoinduced Annealing of Intrinsic Defects in Hexagonal CdSxSe1���x Quantum Dots V. P. Kunets, N. R. Kulish, M. P. Lisitsa, and V. P. Bryksa pp. 447-450 Full Text: PDF (111 kB) Carrier Density Profile in Weakly Coupled GaAs/AlGaAs Superlattices P. N. Brunkov, S. O. Usov, Yu. G. Musikhin, A. E. Zhukov, G. E. Cirlin, V. M. Ustinov, S. G. Konnikov, and G. K. Rasulova pp. 451-454 Full Text: PDF (84 kB) AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS Electrical Properties of Fine-Grained Polycrystalline CdTe S. A. Kolosov, Yu. V. Klevkov, and A. F. Plotnikov pp. 455-460 Full Text: PDF (74 kB) Exciton Photoluminescence in Doped Quasi-1D Structures Based on Silicon A. V. Sachenko, D. V. Korbutyak, Yu. V. Kryuchenko, and O. M. Sreseli pp. 461-467 Full Text: PDF (100 kB) A Small-Molecule Organic Semiconductor F. Yakuphanoglu, M. Aydin, N. Arsu, and M. Sekerci pp. 468-471 Full Text: PDF (67 kB) PHYSICS OF SEMICONDUCTOR DEVICES Characteristics of Nuclear Radiation Detectors Based on Semi-Insulating Gallium Arsenide E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, N. B. Strokan, V. I. Vasil'ev, V. N. Gavrin, E. P. Veretenkin, Yu. P. Kozlova, V. B. Kulikov, A. V. Markov, and A. Ya. Polyakov pp. 472-479 Full Text: PDF (108 kB) Investigation of Characteristics of InSb-Based Photodiode Linear Arrays P. V. Biryulin, V. I. Turinov, and E. B. Yakimov pp. 480-485 Full Text: PDF (197 kB) Thermal Calculation of SiC p���i���n Diodes P. B. Gamuletskaya, A. V. Kirillov, A. A. Lebedev, L. P. Romanov, and V. A. Smirnov pp. 486-493 Full Text: PDF (82 kB)en
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dc.format.extent1708586 bytes
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dc.publisherMAIK ���Nauka/Interperiodica��.en
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dc.relation.ispartofseriesV. 38en
dc.relation.ispartofseriesI. 04en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
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dc.subjectSemiconductorsen
dc.subject.lcshdc.subject.lcsh[en_US]en_US
dc.subject.lcshPhysicsen
dc.subject.otherdc.subject.other[en_US]en_US
dc.titleSemiconductors V. 38, I. 04en
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