| dc.description | Semiconductors -- September 2005
Volume 39, Issue 9, pp. 989-1109
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Formation of Nanostructures in a Ga2Se3/GaAs System
N. N. Bezryadin, G. I. Kotov, I. N. Arsent'ev, and A. A. Starodubtsev
pp. 989-992 Full Text: PDF (175 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Microphotoluminescence of Undoped Single-Crystal Zinc Telluride Produced by Nonequilibrium Vapor-Phase Growth Techniques
V. V. Ushakov and Yu. V. Klevkov
pp. 993-997 Full Text: PDF (145 kB)
Exact Self-Compensation of Conduction in Cd0.95Zn0.05Te:Cl Crystals in a Wide Range of Cd Vapor Pressures
O. A. Matveev, A. I. Terent'ev, N. K. Zelenina, V. N. Gus'kov, V. E. Sedov, A. A. Tomasov, and V. P. Karpenko
pp. 998-1003 Full Text: PDF (76 kB)
Optical Properties of ZnGeP2 in the UV Spectral Region
Yu. M. Basalaev, A. B. Gordienko, and A. S. Poplavnoi
pp. 1004-1006 Full Text: PDF (48 kB)
Instability of Drift Waves in Two-Component Solid-State Plasma
A. A. Bulgakov and O. V. Shramkova
pp. 1007-1012 Full Text: PDF (103 kB)
Electron Traps in Thin Layers of Low-Temperature-Grown Gallium Arsenide with As���Sb Nanoclusters
P. N. Brunkov, A. A. Gutkin, V. V. Chaldyshev, N. N. Bert, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin
pp. 1013-1016 Full Text: PDF (59 kB)
Study of the Properties of Hg1 ��� x ��� y ��� zCdxMnyZnzTe as a New Infrared Optoelectronic Material
I. N. Gorbatyuk, S. E. Ostapov, S. G. Dremlyuzhenko, R. A. Zaplitnyi, I. M. Fodchuk, V. V. Zhikharevich, V. G. Deibuk, N. A. Popenko, I. V. Ivanchenko, A. A. Zhigalov, and S. Yu. Karelin
pp. 1017-1022 Full Text: PDF (140 kB)
Transport Coefficients of n-Bi2Te2.7Se0.3 in a Two-Band Model of the Electron Spectrum
P. P. Konstantinov, L. V. Prokof'eva, M. I. Fedorov, D. A. Pshenai-Severin, Yu. I. Ravich, V. V. Kompaniets, and V. A. Chistyakov
pp. 1023-1027 Full Text: PDF (68 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
The Formation of Nanodimensional Structures on the Surface of p-CdTe Crystals Exposed to a Single Radiation Pulse from a Ruby Laser
A. Baidullaeva, A. I. Vlasenko, L. F. Cuzan, O. S. Litvin, and P. E. Mozol'
pp. 1028-1031 Full Text: PDF (365 kB)
Effect of a Submonolayer Metal Film on Band Bending in a Semiconductor Substrate
S. Yu. Davydov and A. V. Pavlyk
pp. 1032-1034 Full Text: PDF (33 kB)
Photoelectric Properties of Surface-Barrier Structures Based on Zn2 ��� 2xCuxInxSe2 Films Obtained by Selenization
V. Yu. Rud', Yu. V. Rud', V. F. Gremenok, E. P. Zaretskaya, and O. N. Sergeeva
pp. 1035-1039 Full Text: PDF (147 kB)
Simulation of Special Features of the Drift-Mobility Saturation in Submicrometer Silicon Structures
V. A. Gergel', Yu. V. Gulyaev, and M. N. Yakupov
pp. 1040-1044 Full Text: PDF (71 kB)
LOW-DIMENSIONAL SYSTEMS
Influence of an Increase in the Implantation Dose of Erbium Ions and Annealing Temperature on Photoluminescence in AlGaN/GaN Superlattices and GaN Epitaxial Layers
A. M. Emel'yanov, N. A. Sobolev, E. I. Shek, V. V. Lundin, A. S. Usikov, and E. O. Parshin
pp. 1045-1047 Full Text: PDF (47 kB)
A Spin Filter with a Quantum Point Contact in a Dilute Magnetic Semiconductor
S. A. Ignatenko and V. E. Borisenko
pp. 1048-1052 Full Text: PDF (67 kB)
The Stark Shift of the Hole States in Separate InAs/GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates
M. M. Sobolev, G. E. Cirlin, Yu. B. Samsonenko, N. K. Polyakov, and A. A. Tonkikh
pp. 1053-1057 Full Text: PDF (61 kB)
Electronic Structure of Titanium Disulfide Nanostructures: Monolayers, Nanostripes, and Nanotubes
V. V. Ivanovskaya, G. Seifert, and A. L. Ivanovskii
pp. 1058-1065 Full Text: PDF (656 kB)
Exciton States in Semiconductor Spherical Nanostructures
S. I. Pokutnyi
pp. 1066-1070 Full Text: PDF (64 kB)
High-Frequency Nonlinear Response of Double-Well Nanostructures
V. F. Elesin and I. Yu. Kateev
pp. 1071-1075 Full Text: PDF (74 kB)
Polarization of the Optical Emission of Polaron Excitons in Anisotropic Quantum Dots
A. Yu. Maslov and O. V. Proshina
pp. 1076-1081 Full Text: PDF (66 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Millimeter���Submillimeter Phonon-Cooled Hot-Electron Bolometer Mixer Based on Two-Dimensional Electron Gas in an AlGaAs/GaAs Heterostructure
D. V. Morozov, K. V. Smirnov, A. V. Smirnov, V. A. Lyakhov, and G. N. Goltsman
pp. 1082-1086 Full Text: PDF (131 kB)
Semiconductor WGM Lasers for the Mid-IR Spectral Range
V. V. Sherstnev, A. M. Monakhov, A. P. Astakhova, A. Yu. Kislyakova, Yu. P. Yakovlev, N. S. Averkiev, A. Krier, and G. Hill
pp. 1087-1092 Full Text: PDF (139 kB)
Semiconductor���Insulator Structures in the Phototargets of Vidicons Sensitive in the Middle Infrared Region of the Spectrum
N. F. Kovtonyuk, V. P. Misnik, and A. V. Sokolov
pp. 1093-1095 Full Text: PDF (42 kB)
A Mechanism of Electroluminescence in Silicon Diodes with a High Dislocation Density
A. V. Sachenko and Yu. V. Kryuchenko
pp. 1096-1101 Full Text: PDF (76 kB)
A Combined Model of a Resonant-Tunneling Diode
I. I. Abramov, I. A. Goncharenko, and N. V. Kolomeitseva
pp. 1102-1109 Full Text: PDF (97 kB) | en |
