| dc.description | Semiconductors -- October 2005
Volume 39, Issue 10, pp. 1111-1233
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Thermodynamic Stability of Bulk and Epitaxial CdHgTe, ZnHgTe, and MnHgTe Alloys
V. G. Deibuk, S. G. Dremlyuzhenko, and S. �. Ostapov
pp. 1111-1116 Full Text: PDF (77 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Low-Temperature Microwave Magnetoresistance of Lightly Doped p-Ge and p-Ge1 ��� xSix
A. I. Veinger, A. G. Zabrodskii, and T. V. Tisnek
pp. 1117-1121 Full Text: PDF (65 kB)
Features of Physical Differentiation with Respect to Light Absorbance in Junction Photovoltage Spectra
L. I. Berezhinskii, E. F. Venger, I. E. Matyash, A. V. Sachenko, and B. K. Serdega
pp. 1122-1127 Full Text: PDF (85 kB)
Mechanism of Radiative Recombination in the Region of Interband Transitions in Si���Ge Solid Solutions
A. M. Emel'yanov, N. A. Sobolev, T. M. Mel'nikova, and N. V. Abrosimov
pp. 1128-1130 Full Text: PDF (43 kB)
Magnetism of III���V Crystals Doped with Rare-Earth Elements
N. T. Bagraev and V. V. Romanov
pp. 1131-1140 Full Text: PDF (116 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Study of Certain Properties of Si���Si1 ��� xGex (0 <= x <= 1) Structures Grown from a Restricted Tin-Based Solution���Melt by Liquid-Phase Epitaxy
B. Sapaev and A. S. Saidov
pp. 1141-1146 Full Text: PDF (287 kB)
Formation of Potential Barriers in Undoped Disordered Semiconductors
N. V. Vishnyakov, S. P. Vikhrov, V. G. Mishustin, A. P. Avachev, I. G. Utochkin, and A. A. Popov
pp. 1147-1152 Full Text: PDF (83 kB)
Stabilization of Charge at the Interface Between the Buried Insulator and Silicon in Silicon-on-Insulator Structures
I. V. Antonova
pp. 1153-1157 Full Text: PDF (68 kB)
LOW-DIMENSIONAL SYSTEMS
Radiative Recombination in GaN Nanocrystals at High Intensities of Optical Excitation
A. N. Gruzintsev, A. N. Red'kin, and C. Barthou
pp. 1158-1161 Full Text: PDF (61 kB)
Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions
E. E. Vdovin and Yu. N. Khanin
pp. 1162-1167 Full Text: PDF (84 kB)
Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO2 Films
E. B. Gorokhov, V. A. Volodin, D. V. Marin, D. A. Orekhov, A. G. Cherkov, A. K. Gutakovskii, V. A. Shvets, A. G. Borisov, and M. D. Efremov
pp. 1168-1175 Full Text: PDF (229 kB)
Electronic Structure and Spectral Properties of Si46 and Na8Si46 Clathrates
S. I. Kurganskii, N. A. Borshch, and N. S. Pereslavtseva
pp. 1176-1181 Full Text: PDF (113 kB)
Terahertz Electroluminescence Originating from Spatially Indirect Intersubband Transitions in a GaAs/AlGaAs Quantum-Cascade Structure
G. F. Glinskii, A. V. Andrianov, O. M. Sreseli, and N. N. Zinov'ev
pp. 1182-1187 Full Text: PDF (88 kB)
Nonequilibrium Room-Temperature Carrier Distribution in InAs Quantum Dots Overgrown with Thin AlAs/InAlAs Layers
N. V. Kryzhanovskaya, A. G. Gladyshev, S. A. Blokhin, M. V. Maksimov, E. S. Semenova, A. P. Vasil'ev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg
pp. 1188-1193 Full Text: PDF (100 kB)
Study of the Properties of a Two-Dimensional Electron Gas in p���-3C-SiC/n+-6H-SiC Heterostructures at Low Temperatures
A. A. Lebedev, D. K. Nel'son, B. S. Razbirin, I. I. Saidashev, A. N. Kuznetsov, and A. E. Cherenkov
pp. 1194-1196 Full Text: PDF (49 kB)
AMORPHOUS, VITREOUS, AND POROUS SEMICONDUCTORS
Kinetics of Structural and Phase Transformations in Thin SiOx Films in the Course of a Rapid Thermal Annealing
V. A. Dan'ko, I. Z. Indutnyi, V. S. Lysenko, I. Yu. Maidanchuk, V. I. Min'ko, A. N. Nazarov, A. S. Tkachenko, and P. E. Shepelyavyi
pp. 1197-1203 Full Text: PDF (137 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
A Quasi-hydrodynamic Modification of the Uniform-Channel Approximation in MOS-Transistor Theory
V. A. Gergel' and M. N. Yakupov
pp. 1204-1209 Full Text: PDF (80 kB)
Temperature Dependence of the Threshold Current of QW Lasers
N. L. Bazhenov, K. D. Mynbaev, V. I. Ivanov-Omskii, V. A. Smirnov, V. P. Evtikhiev, N. A. Pikhtin, M. G. Rastegaeva, A. L. Stankevich, I. S. Tarasov, A. S. Shkol'nik, and G. G. Zegrya
pp. 1210-1214 Full Text: PDF (66 kB)
Mid- and Far-IR Focal Plane Arrays Based on Hg1 ��� xCdxTe Photodiodes
V. I. Stafeev, K. O. Boltar', I. D. Burlakov, V. M. Akimov, E. A. Klimanov, L. D. Saginov, V. N. Solyakov, N. G. Mansvetov, V. P. Ponomarenko, A. A. Timofeev, and A. M. Filachev
pp. 1215-1223 Full Text: PDF (394 kB)
Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures
G. S. Khrypunov
pp. 1224-1228 Full Text: PDF (56 kB)
Electroluminescent Properties of Strained p-Si LEDs
N. A. Sobolev, A. M. Emel'yanov, E. I. Shek, O. V. Feklisova, and E. B. Yakimov
pp. 1229-1232 Full Text: PDF (61 kB)
ERRATA
Erratum: "Interpretation of the Visible Photoluminescence of Inequisized Silicon Nanoparticles Suspended in Ethanol" [Semiconductors 39, 884 (2005)]
V. E. Ogluzdin
p. 1233 Full Text: PDF (6 kB) | en |
