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Physics of the Solid State V. 46, I. 02

dc.contributor.editorEditor of work here.en_US
dc.contributor.otherPreservation Department, Stony Brook University Libraries.en_US
dc.contributor.otherCataloging & Metadata Department, Stony Brook University Libraries.en_US
dc.date.accessioned2007-05-24T19:58:58Z
dc.date.accessioned2015-04-24T14:43:43Z
dc.date.available2007-05-24T19:58:58Z
dc.date.available2015-04-24T14:43:43Z
dc.date.issued2004-02en_US
dc.identifier.urihttp://hdl.handle.net/1951/39954
dc.identifier.urihttp://hdl.handle.net/11401/70538
dc.descriptionleave(s) : ill; 28 cm.en_US
dc.descriptionPhysics of the Solid State -- January 2004 Volume 46, Issue 1, pp. 1-192 Oleg Vladimirovich Losev: Pioneer of Semiconductor Electronics (Celebrating One Hundred Years since His Birth) M. A. Novikov pp. 1-4 Full Text: PDF (62 kB) PROCEEDINGS OF THE CONFERENCE DEDICATED TO O. V. LOSEV (1903���1942) (Nizhni Novgorod, Russia, March 17���20, 2003) Electroluminescence Efficiency of Silicon Diodes M. S. Bresler, O. B. Gusev, B. P. Zakharchenya, and I. N. Yassievich pp. 5-9 Full Text: PDF (67 kB) Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers S. P. Svetlov, V. Yu. Chalkov, V. G. Shengurov, Yu. N. Drozdov, Z. F. Krasil'nik, L. V. Krasil'nikova, M. V. Stepikhova, D. A. Pavlov, T. V. Pavlova, P. A. Shilyaev, and A. F. Khokhlov[dagger] pp. 10-12 Full Text: PDF (186 kB) Edge Electroluminescence of Silicon: An Amorphous-Silicon���Crystalline-Silicon Heterostructure M. S. Bresler, O. B. Gusev, E. I. Terukov, A. Froitzheim, and W. Fuhs pp. 13-16 Full Text: PDF (51 kB) The Influence of P+, B+, and N+ Ion Implantation on the Luminescence Properties of the SiO2 : nc-Si System D. I. Tetelbaum, O. N. Gorshkov, V. A. Burdov, S. A. Trushin, A. N. Mikhaylov, D. M. Gaponova, S. V. Morozov, and A. I. Kovalev pp. 17-21 Full Text: PDF (70 kB) Photoluminescence and Structural Defects in Silicon Layers Implanted by Iron Ions �. A. Shteinman, V. I. Vdovin, A. N. Izotov, Yu. N. Parkhomenko, and A. F. Borun pp. 22-26 Full Text: PDF (233 kB) Phonon-Assisted Radiative Electron���Hole Recombination in Silicon Quantum Dots V. A. Belyakov, V. A. Burdov, D. M. Gaponova, A. N. Mikhaylov, D. I. Tetelbaum, and S. A. Trushin pp. 27-31 Full Text: PDF (67 kB) Formation of Two-Dimensional Photonic-Crystal Structures in Silicon for Near-Infrared Region Using Fine Focused Ion Beams A. F. Vyatkin, E. Yu. Gavrilin, Yu. B. Gorbatov, V. V. Starkov, and V. V. Sirotkin pp. 32-34 Full Text: PDF (396 kB) Effect of the Postimplantation-Annealing Temperature on the Properties of Silicon Light-Emitting Diodes Fabricated through Boron Ion Implantation into n-Si N. A. Sobolev, A. M. Emel'yanov, E. I. Shek, and V. I. Vdovin pp. 35-39 Full Text: PDF (224 kB) Silicon LEDs Emitting in the Band-to-Band Transition Region: Effect of Temperature and Current Strength A. M. Emel'yanov, N. A. Sobolev, and E. I. Shek pp. 40-44 Full Text: PDF (72 kB) New Mechanisms of Localization of Charge Carriers in Nanosilicon I. V. Blonskyy, A. Yu. Vakhnin, V. N. Kadan, and A. K. Kadashchuk pp. 45-48 Full Text: PDF (55 kB) Si/Ge Nanostructures for Optoelectronics Applications V. A. Egorov, G. �. Cirlin, A. A. Tonkikh, V. G. Talalaev, A. G. Makarov, N. N. Ledentsov, V. M. Ustinov, N. D. Zakharov, and P. Werner pp. 49-55 Full Text: PDF (238 kB) Ge/Si Quantum Dots in External Electric and Magnetic Fields A. V. Dvurechenskii, A. I. Yakimov, A. V. Nenashev, and A. F. Zinov'eva pp. 56-59 Full Text: PDF (57 kB) Photoluminescence of Self-Assembled GeSi/Si(001) Nanoislands of Different Shapes N. V. Vostokov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, M. V. Shaleev, and A. N. Yablonskii pp. 60-63 Full Text: PDF (145 kB) Synthesis of Ordered Ge���Si Heterostructures Containing Ultrasmall Germanium Nanoclusters Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov, A. I. Nikiforov, B. Z. Ol'shanetskii, O. P. Pchelyakov, L. V. Sokolov, and S. A. Teys pp. 64-66 Full Text: PDF (174 kB) Correlation between the Energy of SiGe Nanoislands and Their Shape and Size M. Ya. Valakh, V. N. Dzhagan, Z. F. Krasil'nik, P. M. Lytvyn, D. N. Lobanov, E. V. Mozdor, A. V. Novikov, V. A. Yukhymchuk, and A. M. Yaremko pp. 67-70 Full Text: PDF (57 kB) Photoluminescence of Si/Ge Nanostructures Grown by Molecular-Beam Epitaxy at Low Temperatures T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. M. Rzaev, N. N. Sibel'din, and V. A. Tsvetkov pp. 71-73 Full Text: PDF (122 kB) Stepwise Dependence of the Photoconductivity of Si/Ge Structures with Quantum Dots on the Interband Illumination Intensity O. A. Shegai, V. A. Markov, and A. I. Nikiforov pp. 74-76 Full Text: PDF (51 kB) Growth and Structure of Ge Nanoislands on an Atomically Clean Silicon Oxide Surface A. I. Nikiforov, V. V. Ul'yanov, O. P. Pchelyakov, S. A. Teys, and A. K. Gutakovskii pp. 77-79 Full Text: PDF (77 kB) Growth of Germanium Nanoislands and Nanowires on Singular and Vicinal Si(111) Surfaces Prior to the Formation of a Wetting Layer S. A. Teys, A. B. Talochkin, K. N. Romanyuk, and B. Z. Olshanetsky pp. 80-84 Full Text: PDF (536 kB) Composition and Elastic Stresses in Multilayer Structures with Si1 ��� xGex Nanoislands M. Ya. Valakh, V. N. Dzhagan, P. M. Lytvyn, V. A. Yukhymchuk, Z. F. Krasil'nik, A. V. Novikov, and D. N. Lobanov pp. 85-88 Full Text: PDF (52 kB) Self-Assembling of Ge Quantum Dots in the CaF2/Ge/CaF2/Si Heteroepitaxial System and the Development of Tunnel-Resonance Diode on Its Basis L. V. Sokolov, A. S. Deryabin, A. I. Yakimov, O. P. Pchelyakov, and A. V. Dvurechenskii pp. 89-91 Full Text: PDF (203 kB) Resonant Raman Scattering by Strained and Relaxed Germanium Quantum Dots A. G. Milekhin, A. I. Nikiforov, M. Yu. Ladanov, O. P. Pchelyakov, S. Schulze, and D. R. T. Zahn pp. 92-96 Full Text: PDF (121 kB) Er3+ Photoluminescence Excitation Spectra in Erbium-Doped Epitaxial Silicon Structures B. A. Andreev, Z. F. Krasil'nik, D. I. Kryzhkov, A. N. Yablonskii, V. P. Kuznetsov, T. Gregorkiewicz, and M. A. J. Klik pp. 97-100 Full Text: PDF (64 kB) Effect of Growth Conditions on Photoluminescence of Erbium-Doped Silicon Layers Grown Using Sublimation Molecular-Beam Epitaxy V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, B. A. Andreev, Z. F. Krasil'nik, and D. I. Kryzhkov pp. 101-103 Full Text: PDF (115 kB) High-Efficiency Erbium Ion Luminescence in Silicon Nanocrystal Systems P. K. Kashkarov, B. V. Kamenev, M. G. Lisachenko, O. A. Shalygina, V. Yu. Timoshenko, M. Schmidt, J. Heitmann, and M. Zacharias pp. 104-108 Full Text: PDF (73 kB) Effect of the p���n Junction Breakdown Mechanism on the Er3+ Ion Electroluminescence Intensity and Excitation Efficiency in Si : Er Epitaxial Layers Grown through Sublimation Molecular Beam Epitaxy V. B. Shmagin, D. Yu. Remizov, Z. F. Krasil'nik, V. P. Kuznetsov, V. N. Shabanov, L. V. Krasil'nikova, D. I. Kryzhkov, and M. N. Drozdov pp. 109-112 Full Text: PDF (141 kB) The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films M. V. Stepikhova, M. F. Cerqueira, M. Losurdo, M. M. Giangregorio, E. Alves, T. Monteiro, and M. J. Soares pp. 113-117 Full Text: PDF (223 kB) Intraband Absorption and Emission of Light in Quantum Wells and Quantum Dots L. E. Vorob'ev, V. Yu. Panevin, N. K. Fedosov, D. A. Firsov, V. A. Shalygin, S. Hanna, A. Seilmeier, Kh. Moumanis, F. Julien, A. E. Zhukov, and V. M. Ustinov pp. 118-121 Full Text: PDF (63 kB) Photoconductivity of Lead Telluride-Based Doped Alloys in the Submillimeter Wavelength Range K. G. Kristovskii, A. E. Kozhanov, D. E. Dolzhenko, I. I. Ivanchik, D. Watson, and D. R. Khokhlov pp. 122-124 Full Text: PDF (41 kB) Shallow-Impurity-Assisted Transitions in the Course of Submillimeter Magnetoabsorption of Strained Ge/GeSi(111) Quantum-Well Heterostructures V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov, D. V. Kozlov, and O. A. Kuznetsov pp. 125-129 Full Text: PDF (107 kB) Intersubband Cyclotron Resonance of Holes in Strained Ge/GeSi(111) Heterostructures with Germanium Wide Quantum Wells and Cyclotron Resonance of 1L Electrons in GeSi Layers V. Ya. Aleshkin, D. B. Veksler, V. I. Gavrilenko, I. V. Erofeeva, A. V. Ikonnikov, D. V. Kozlov, and O. A. Kuznetsov pp. 130-137 Full Text: PDF (143 kB) Magnetotransport Characterization of THz Detectors Based on Plasma Oscillations in Submicron Field-Effect Transistors J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska, K. Golaszewska, M. S. Shur, D. Smirnov, V. Gavrilenko, A. Antonov, and S. Morozov pp. 138-145 Full Text: PDF (170 kB) Electron Transport and Terahertz Radiation Detection in Submicrometer-Sized GaAs/AlGaAs Field-Effect Transistors with Two-Dimensional Electron Gas A. V. Antonov, V. I. Gavrilenko, E. V. Demidov, S. V. Morozov, A. A. Dubinov, J. Lusakowski, W. Knap, N. Dyakonova, E. Kaminska, A. Piotrowska, K. Golaszewska, and M. S. Shur pp. 146-149 Full Text: PDF (63 kB) Cyclotron Resonance of Holes in Silicon in Quantizing Magnetic Fields D. B. Veksler, V. I. Gavrilenko, and K. E. Spirin pp. 150-152 Full Text: PDF (46 kB) Plasmon-Induced Terahertz Absorption and Photoconductivity in a Grid-Gated Double-Quantum-Well Structure V. V. Popov, T. V. Teperik, O. V. Polischuk, X. G. Peralta, S. J. Allen, N. J. M. Horing, and M. C. Wanke pp. 153-156 Full Text: PDF (63 kB) Destruction and Stabilization of the Electromagnetic Transparency of a Semiconductor Superlattice Yu. A. Romanov and Yu. Yu. Romanova pp. 157-163 Full Text: PDF (99 kB) On a Superlattice Bloch Oscillator Yu. A. Romanov and Yu. Yu. Romanova pp. 164-169 Full Text: PDF (81 kB) Bose Condensation of Interwell Excitons in Lateral Traps: A Phase Diagram A. A. Dremin, A. V. Larionov, and V. B. Timofeev pp. 170-172 Full Text: PDF (72 kB) Electronic States and Vibration Spectra of CdTe/ZnTe Quantum Dot Superlattices V. S. Bagaev, L. K. Vodop'yanov, V. S. Vinogradov, V. V. Zaitsev, S. P. Kozyrev, N. N. Mel'nik, E. E. Onishchenko, and G. Karczewski pp. 173-175 Full Text: PDF (51 kB) Resonant Stokes and Anti-Stokes Raman Scattering of Light in CdSe/ZnSe Nanostructures M. Ya. Valakh, V. V. Strelchuk, G. N. Semenova, and Yu. G. Sadofyev pp. 176-178 Full Text: PDF (51 kB) SEMICONDUCTORS AND DIELECTRICS The Influence of Hydrostatic Pressure on the Static and Dynamic Properties of an InSe Crystal: A First-Principles Study K. Z. Rushchanskii pp. 179-187 Full Text: PDF (222 kB) MAGNETISM AND FERROELECTRICITY Temperature Dependences of the Dielectric Properties of Lithium���Titanium Ferrite Ceramics A. V. Malyshev, V. V. Peshev, and A. M. Pritulov pp. 188-191 Full Text: PDF (74 kB) ERRATA Erratum: "Phase Separation of the Spin System in the La0.93Sr0.07MnO3 Crystal" [Phys. Solid State 45 (12), 2297 (2003)] S. F. Dubunin, V. E. Arkhipov, S. G. Teploukhov, V. D. Parkhomenko, N. N. Loshkareva, and N. I. Solin p. 192 Full Text: PDF (6 kB)en
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dc.format.mediumElectronic Resource.en_US
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dc.publisherMAIK ���Nauka/Interperiodica��.en
dc.publisherStony Brook University.en_US
dc.relation.ispartofseriesV. 46en
dc.relation.ispartofseriesI. 02en
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.rightsAll Rights Reserved. Stony Brook University.en_US
dc.subjectPhysics of the Solid Stateen
dc.subject.lcshPhysicsen
dc.titlePhysics of the Solid State V. 46, I. 02en
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dc.publisher.locationStony Brook, NY.en_US


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