dc.description | Semiconductors -- December 2002
Volume 36, Issue 12, pp. 1323-1402
ATOMIC STRUCTURE AND NONELECTRONIC PROPERTIES OF SEMICONDUCTORS
Influence of Segregation on the Composition of GaAs1 ��� xSbx Solid Solutions Grown by Liquid-Phase Epitaxy
Yu. F. Biryulin
pp. 1323-1325 Full Text: PDF (29 kB)
ELECTRONIC AND OPTICAL PROPERTIES OF SEMICONDUCTORS
Temperature Dependence of the Width of the Deep-Level Band in Silicon with a High Concentration of Defects
J. Partyka, P. W. Zukowski, P. Wegierek, A. Rodzik, Yu. V. Sidorenko, and Yu. A. Shostak
pp. 1326-1331 Full Text: PDF (73 kB)
The Mechanisms of Hole Scattering in p-Hg0.8Cd0.2Te Crystals at Low Temperatures
V. V. Bogoboyashchii
pp. 1332-1340 Full Text: PDF (122 kB)
A DLTS Study of Deep Levels in the Band Gap of Textured Stoichiometric p-CdTe Polycrystals
E. A. Bobrova, Yu. V. Klevkov, S. A. Medvedev, and A. F. Plotnikov
pp. 1341-1346 Full Text: PDF (81 kB)
Electron Spin Resonance in Cd1 ��� xMnxTe and Zn1 ��� xMnxTe Compounds
J. Partyka, P. W. Zukowski, P. Wegierek, A. Rodzik, Yu. V. Sidorenko, and Yu. A. Shostak
pp. 1347-1351 Full Text: PDF (62 kB)
SEMICONDUCTOR STRUCTURES, INTERFACES, AND SURFACES
Deep Levels in the Band Gap of GaN Layers Irradiated with Protons
M. M. Sobolev, N. A. Sobolev, A. S. Usikov, N. M. Shmidt, A. N. Yakimenko, G. M. Gusinskii, and V. O. Naidenov
pp. 1352-1354 Full Text: PDF (48 kB)
Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
A. Yu. Egorov, V. A. Odnoblyudov, N. V. Krizhanovskaya, V. V. Mamutin, and V. M. Ustinov
pp. 1355-1359 Full Text: PDF (65 kB)
LOW-DIMENSIONAL SYSTEMS
Analysis of Inelastic Scattering of Quasi-Two-Dimensional Electrons of a Superlattice by Acoustic Phonons with Allowance Made for the Miniband Dispersion
S. I. Borisenko
pp. 1360-1363 Full Text: PDF (55 kB)
Damping of Bloch Oscillations in Quantum Dot Superlattices: A General Approach
I. A. Dmitriev and R. A. Suris
pp. 1364-1374 Full Text: PDF (147 kB)
Damping of Bloch Oscillations in One-, Two-, and Three-Dimensional Quantum-Dot Superlattices
I. A. Dmitriev and R. A. Suris
pp. 1375-1384 Full Text: PDF (171 kB)
MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
V. A. Solov'ev, Ya. V. Terent'ev, A. A. Toropov, B. Ya. Meltser, A. N. Semenov, A. A. Sitnikova, S. V. Ivanov, J. R. Meyer, and P. S. Kop'ev
pp. 1385-1388 Full Text: PDF (126 kB)
Weak Antilocalization and Spin���Orbit Interaction in a In0.53Ga0.47As/InP Quantum Well in the Persistent Photoconductivity State
D. D. Bykanov, S. V. Novikov, T. A. Polyanskaya, and I. G. Savel'ev
pp. 1389-1397 Full Text: PDF (121 kB)
PHYSICS OF SEMICONDUCTOR DEVICES
Isotope-Pure 28Si Layers Grown by VPE
O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, P. N. Aruev, B. Ya. Ber, V. Yu. Davydov, N. V. Zabrodskaya, V. V. Zabrodsky, M. A. Kaliteevsky, P. S. Kop'ev, A. P. Kovarsky, and V. L. Sukhanov
pp. 1398-1399 Full Text: PDF (32 kB)
Isotope-Pure Silicon Layers Grown by MBE
O. N. Godisov, A. K. Kaliteevsky, A. Yu. Safronov, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, D. V. Denisov, M. A. Kaliteevsky, P. S. Kop'ev, A. P. Kovarsky, V. M. Ustinov, and H.-J. Pohl
pp. 1400-1402 Full Text: PDF (75 kB) | en |